Investigation of different width size of transistor on internal resistance and output power in CMOS rectifier using two PMOS and NMOS

Abstract

This paper presents the simulation studies on different width size of PMOS and NMOS on internal resistance and output power in CMOS rectifier. This investigation focuses on the internal resistance of the MOSFET and output power in the rectifier. The proposed CMOS rectifier considered the PMOS carrier mobility by increasing the width size of transistors rapidly. This simulation is done using CADENCE simulation software. The best configuration of CMOS rectifier is selected based on the total internal resistance and output power of the CMOS rectifier.