Abstract:Degradation induced by the negative bias temperature instability (NBTI) can be attributed to three mutually uncoupled physical mechanisms, which consist of the generation of interface traps (ΔV
IT), hole trapping in pre-existing gate oxide defects (ΔV
HT), and the generation of gate oxide defects (ΔV
OT). In this work, the characteristic of NBTI for p-type MOSFET fabricated using a 28-nm high-k metal gate (HKMG) process has been thoroughly studied. The expe… Show more
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