Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy

Dhar, S.; Halder, N. C.; Mondal, A.

doi:10.1016/j.tsf.2006.07.116

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…12 Second, an instability of as-grown samples exists and the subsequent annealing treatments cause a severe degradation of the minority-carrier lifetimes. 13,14 The formation of point defects such as N-N split interstitial 15 and the As Ga antisite 16 have been suggested as electron traps in the Ga͑In͒NAs alloy, and also clustering of N atoms has been reported to dominate the emission in dilute nitrides of GaAs, 17 creating energy levels below the conduction-band energy that get deeper as the number of N atoms increases. 18 The degradation of the structural quality of the alloy has been directly related to the initial configuration of N at atomic scale 19,20 and therefore its characterization is of primary interest to understand the electrical and optical properties and thus optimize the performance of this system.…”

Section: Introductionmentioning

confidence: 99%

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

et al. 2009

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While high-angle annular dark field scanning transmission electron microscopy ͑HAADF-STEM͒ has been successfully used for the analysis of heavy atoms in a lighter matrix, the detection of light atoms in a heavy matrix remains challenging. In this paper, we show that the combination of first-principles total-energy calculations with aberration-corrected HAADF-STEM experimental and simulated images can be used to overcome this problem. The application of this methodology to the analysis of dilute nitrides of GaAs points to the existence of a major proportion of ͑2N As ͒ nn in the alloy, which is a relatively stable configuration in GaAsN as revealed by our energetic calculations. Our study has allowed us to shed light in the effect of the local distortion of the lattice due to different configuration of atoms in HAADF-STEM imaging.

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Section: Introductionmentioning

confidence: 99%

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

et al. 2009

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“…However, point defects such as the N-N split interstitials [71] and the AsGa antisites [72] have been identified as electron traps in Ga(In)NAs, and the local clustering of N atoms has been suggested to create a range of defect states within the energy gap [73]. Therefore, the characterization at the atomic scale of the behavior of N at the few percent level in GaAs is critical to understand and optimize the performance of this system.…”

Section: Analysis Of the N Distribution In Gaasnmentioning

confidence: 99%

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Sales

Beltrán

Lozano

et al. 2012

Semiconductor Research

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This chapter briefly describes the fundamentals of high-resolution electron microscopy techniques. In particular, the Peak Pairs approach for strain mapping with atomic column resolution, and a quantitative procedure to extract atomic column compositional information from Z-contrast high-resolution images are presented. It also reviews the structural, compositional, and strain results obtained by conventional and advanced transmission electron microscopy methods on a number of III-V semiconductor nanostructures and heterostructures.

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“…The materials have already found applications for the realization of various electronic and optoelectronic devices [16][17][18]and high efficiency solar cells [19] However, increased amount of nitrogen is reported to cause a major degradation of the material which remains a problem for the successful application of the material in certain devices. We have recently reported the growth of dilute GaAsN layers by liquid phase epitaxy (LPE) technique, using polycrystalline GaN as the source of nitrogen in the growth melt [20][21][22]. Subsequently we have extended the technique for the growth of GaSbN [23] and InAsN layers.…”

Section: Introductionmentioning

confidence: 99%

Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy

Dhar

2007

2007 International Workshop on Physics of Semiconductor Devices

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We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were preapared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various characterization techniques, namely, energy dispersive X-rays, high resolution X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. Nitrogen-induced deep levels in some materials have been identified and investigated.

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Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy

Cited by 6 publications

References 16 publications

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

Investigation of some group III-V dilute nitride materials grown by liquid phase epitaxy

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