Investigation of deep implanted carbon and oxygen channeling profiles in [1 1 0] silicon, using d-NRA and SEM

Paneta, V.; Erich, M. Susan; Fazinić, Stjepko; Kokkoris, M.; Kopsalis, I.; Petrović, Srdjan; Tadić, Tonči

doi:10.1016/j.nimb.2013.11.020

Cited by 3 publications

(10 citation statements)

References 15 publications

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“…The obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the implanted ions concentration in silicon . Concerning the depth profile of the ion‐induced damage, the results of micro‐Raman, as well as from SEM and RBS, are in full agreement, which prove the ability of the micro‐Raman technique to probe accurately the lattice modifications from the ion implantation …”

Section: Introductionsupporting

confidence: 77%

“…2–1 . 4 MeV using the 5.5 MV TN 11 Tandem of NCSR Demokritos in Greece . The results indicated a more shallow penetration for the random implantation compared with the channeling one, as well as a wider implanted depth for channeling .…”

Section: Samples and Characterizationmentioning

confidence: 87%

“…4 MeV using the 5.5 MV TN 11 Tandem of NCSR Demokritos in Greece . The results indicated a more shallow penetration for the random implantation compared with the channeling one, as well as a wider implanted depth for channeling . The samples have been characterized also by the RBS method, which shows that for the random orientation, the ions were accumulated in a region closer to the surface of the wafer than in the channeling case, while the differences between the two kinds of ion implantation (C or O) appeared minor …”

Section: Samples and Characterizationmentioning

confidence: 93%

“…In this work, we have employed this technique in order to validate the efficiency of the method and investigate its prospects as a probing tool for the in‐depth characterization of the effect of ion implantation. The samples have been characterized with various techniques [SEM, Rutherford backscattering (RBS), and d‐nuclear reaction analysis (NRA)], which provided direct information about the damaged region inside the wafers . By scanning along the transversal cross section of the ion‐implanted region, Raman line intensities, shapes, and shifts have been used to investigate the lattice defects in the ion‐implanted region.…”

Section: Introductionmentioning

confidence: 99%

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Probing high‐energy ion‐implanted silicon by micro‐Raman spectroscopy

Kopsalis

Paneta

Kokkoris

et al. 2014

J Raman Spectroscopy

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The effect of ion implantation (4 MeV12C2+, 5 MeV16O2+, and 8 MeV28Si2+) on [110] silicon wafers in channeling and random orientation is investigated by micro‐Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1–2 µm wide strongly modified region and agreeing with the d‐nuclear reaction analysis measurements. Micro‐Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice. Copyright © 2014 John Wiley & Sons, Ltd.

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Section: Introductionsupporting

confidence: 77%

Section: Samples and Characterizationmentioning

confidence: 87%

Section: Samples and Characterizationmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Probing high‐energy ion‐implanted silicon by micro‐Raman spectroscopy

Kopsalis

Paneta

Kokkoris

et al. 2014

J Raman Spectroscopy

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“…A detailed investigation of the way carbon and silicon ions are implanted is of fundamental interest for potential device applications, principally for carbon, which is a well‐known contaminant in transistors and diodes and, when implanted in high doses, modifies their mechanical and electrical properties . However, there is a certain lack in literature concerning data in the case of high‐energy ion implantations in the channeling orientation of carbon and silicon ions in SiC, especially concerning high fluence.…”

Section: Introductionmentioning

confidence: 99%

Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

Flessa

Ntemou

Kokkoris

et al. 2019

J Raman Spectroscopy

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A 6H‐SiC single crystal implanted in channeling mode by 4‐MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro‐Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro‐Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM‐2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area.

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Non-classical applications of chemical analysis based on nuclear activation

Grdeń

2019

J Radioanal Nucl Chem

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Investigation of deep implanted carbon and oxygen channeling profiles in [1 1 0] silicon, using d-NRA and SEM

Cited by 3 publications

References 15 publications

Probing high‐energy ion‐implanted silicon by micro‐Raman spectroscopy

Probing high‐energy ion‐implanted silicon by micro‐Raman spectroscopy

Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

Non-classical applications of chemical analysis based on nuclear activation

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