Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC

Abstract

A 6H‐SiC single crystal implanted in channeling mode by 4‐MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro‐Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro‐Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM‐2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area.

Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code

“…Namely, with the in crease of the im planted fluence, the crys tal chan nels de te ri o rate caus ing more pro nounced en ergy loss that sub sequently chan neled ions ex pe ri ence, lead ing to shorter achieved ranges and crys tal dam age shift to wards the crys tal sur face. These re sults show good agree ment with pre vi ous stud ies [3,29].…”

Recent advances in linear and nonlinear Raman spectroscopy. Part XIV

“…Dekhili et al [ 145 ] reported new and complete mode assignments of Raman spectra in LiH 2 PO 4 and KLi(H 2 PO 4 ) 2 . Flessa et al [ 146 ] described Raman mapping of 4‐MeV C and Si channeling implantation of 6H–SiC. Gorelik and Pyatyshev [ 147 ] studied the Raman opalescence produced by a destabilizing soft mode near the phase transition in quartz monocrystals.…”

Simulation of the Irradiation Cascade Effect of 6H-SiC Based on Molecular Dynamics Principles

“…In fact, 6H-SiC crystals are a wide band gap material, meaning that the electronic devices made can work more reliably in harsh environments and can be widely used in aerospace, nuclear technology, and other high-temperature, high-radiation scenarios. In the study of phase transformation and amorphization of SiC, Aikaterini Flessa, M.Gloginjić, and others have done many experiments on the effect of irradiation cascade of 6H-SiC, and most of the researchers have studied the amorphization of 6H-SiC by high-energy, fast heavy ion injection using Raman spectroscopy and transmission electron microscopy methods [ 13 , 14 , 15 , 16 ]. K.Kamalakkannan et al, studied the induction behaviour and recrystallisation of 6H-SiC at different depths by low-energy ion injection [ 17 , 18 ].…”