Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage

Roschatt, Philipp Marc; McMahon, R.A.; Pickering, Stephen

doi:10.1109/icpe.2015.7167910

Cited by 11 publications

(7 citation statements)

References 11 publications

(9 reference statements)

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“…10) due to driver delay and this dead time is enough for GaN transistor switching transitions. The impact of dead time on the efficiency of GaN transistors is also analysed in [4], [6], [7], [16]. In the literature, it is proposed to use 0 ns dead time for switching on and about 30 ns dead time for switching off, but the analysis is provided for driver with 0V turn off voltage.…”

Section: The Experimental Results and Discussionmentioning

confidence: 99%

“…This voltage drop decreases efficiency of the converter; therefore, large negative voltage is not desirable. Even with precise dead-timing, the large voltage drop from drain to source still results in a significant variation of the bootstrap voltage [4]; therefore, bootstrap voltage source for driver is not preferable in this case.…”

Section: Gate Driver Designmentioning

confidence: 99%

“…One of the main differences in terms of gate control is the gate threshold voltage V GS(th) , the gate plateau and the maximum gate voltage V GS(max) . As can be seen in Table 1, the maximum gate voltage V GS is much lower than in Si MOSFETs, but anyway most GaN FETs are not fully turned on until V GS reaches about 4 V [4]. To turn off the GaN transistor, the gate voltage must be kept below the minimum gate threshold voltage, which is 1.3 V in this case.…”

Section: Gate Driver Designmentioning

confidence: 99%

See 2 more Smart Citations

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Kroics

Zaķis

Suzdalenko

et al. 2017

Latvian Journal of Physics and Technical Sciences

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A full bridge converter with electrolytic capacitor on the dc bus is a widely used approach for a single phase interface for renewable energy source generation or energy storage integration in the utility grid. New wide bandgap devices enable higher switching frequency, higher efficiency and higher power density. In the paper, the authors introduce the challenges associated with an increase in switching frequency of a single phase inverter and implementation of wide bandgap GaN-based transistors instead of traditional Si-based transistors. The low gate threshold voltage of GaN transistor and unique reverse conduction behaviour require different driving circuit. The design of the driver circuit and other practical issues are analysed in the paper. The paper also presents some practical results. The research results can be useful to avoid mistakes by designing GaN-based power converters as these devices become increasingly interesting for commercial applications.

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Section: The Experimental Results and Discussionmentioning

confidence: 99%

Section: Gate Driver Designmentioning

confidence: 99%

Section: Gate Driver Designmentioning

confidence: 99%

See 1 more Smart Citation

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Kroics

Zaķis

Suzdalenko

et al. 2017

Latvian Journal of Physics and Technical Sciences

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show abstract

“…One of the main differences in terms of the gate control is the gate threshold voltage V GS(th), the gate plateau and the maximum gate voltage V GS(max). The maximum gate voltage V GS is much lower than in Si MOSFETs, but anyway most GaN transistors are not fully turned on until V GS reaches about 4 V [29]. To turn off the GaN transistor, the gate voltage must be kept below the minimum gate threshold voltage, which is 1.3 V in this case.…”

Section: Design Of Gan Transistor Based Full Bridge High Frequency Inmentioning

confidence: 99%

High frequency two-plate capacitive wireless power transfer system

Kroics

Voitkans

2018

Engineering for Rural Development

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The paper discusses the capacitive wireless power transfer (WPT) system for small portable device charging. The capacitive WPT can replace a conventional inductive coupling WPT, because it has no electromagnetic interference, but the capacitive WPT has limitation due to too small coupling capacitance. Therefore, to utilize the capacitive WPT system the switching frequency should be as high as possible: therefore, challenges associated with the design of the power converter working in MHz range will be discussed in details. A calculation of passive components, matching the network and capacitor plate design methodology is given in the paper. The design of the prototype of the capacitive WPT will be described in the paper. This paper proposes to use two copper plates to transfer power, the plates are adopted to generate electric fields and transfer power from the primary side to the secondary side. The equations for calculation of capacitance of the plates are given in the paper. An important task is to calculate the resonant network that generates high voltage in the circuit for high power transfer. The high switching of inverter transistors requires high performance transistors with optimized driver circuit. The design of the inverter and driver circuit is discussed and experimental results are shown.

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“…However, the optimum dead-time for GaN transistors changes with the converter output power and input DC-link voltage [8]. An in-depth investigation in [9] shows the need to modify both the rising and falling edges of the microcontroller (MCU) control signal with the variable dead-time.…”

Section: Introductionmentioning

confidence: 99%

Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive

et al. 2020

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Gallium nitride (GaN) devices are becoming more popular in power semiconductor converters. Due to the absence of the freewheeling substrate diode, the reverse conduction region is used in GaN transistors to conduct the freewheeling current. However, the voltage drop across the device in the reverse conduction mode is relatively high, causing additional power losses. These losses can be optimized by adequately adjusting the dead-time issued by the microcontroller. The dead-time loss minimization strategies presented in the literature have the common disadvantage that either additional hardware or specific converter data are needed for their proper operation. Therefore, this paper’s motivation is to present a novel dead-time loss minimization method for GaN-based high-frequency switching converters for electric drives that does not impose additional requirements on the hardware design phase and converter data acquisition. The method is based on optimizing the current controllers’ output with a simple perturb-and-observe tracker. The experimental results show that the proposed approach can minimize the dead-time losses over the whole drive’s operating range at the cost of only a moderate increase in software complexity.

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Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage

Cited by 11 publications

References 11 publications

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

Design Considerations for Gan-Based Microinverter for Energy Storage Integration Into Ac Grid

High frequency two-plate capacitive wireless power transfer system

Reverse Conduction Loss Minimization in GaN‑Based PMSM Drive

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