Investigation of Damage Induced by Low Energy Focused Ion Beam Irradiation in GaAs

Abstract

Defects induced by Ga focused ion beam (FIB) irradiation at an energy between 0.1 and I keV have been characterized by means of deep level transient spectroscopy (DLTS) and related capacitance measurements. Seven different kinds of defect centers were resolved and two centers at 0.33 and 0.56eV below the conduction band were dominant in the 100eV Ga implanted sample at doses up to 101 5 /cm2. Induced defect centers were observed to distribute over the region far beyond the theoretical ion range, which resulted from defect migration during the irradiation. Low energy irradiation induced defects were readily annealed out during lows temperature heat treatment in contrast to those induced by high energy irradiations.