Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

Lu, Yegang; Song, Sannian; Zhang, Song; Rao, Feng; Wu, Liangcai; Zhu, Min; Liu, Bo; Yao, Dongning

doi:10.1063/1.4711811

Cited by 52 publications

(24 citation statements)

References 23 publications

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“…5a shows the schematic crosssectional diagram of the PCRAM cell structure. Tungsten was used as a heating electrode 260 nm in diameter [23]. Figure 5a presents the measured current-voltage (I-V) curve of the PCRAM cell in current sweeping mode.…”

Section: Resultsmentioning

confidence: 99%

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Zhu

et al. 2015

J Mater Sci: Mater Electron

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In comparison to Ge 2 Sb 2 Te 5 (GST) and pure Sb 70 Se 30 (SbSe) thin films, superlattice-like (SLL) Ge/Sb 70 Se 30 (Ge/SbSe) has a higher crystallization temperature, larger crystallization activation energy, better data retention and lower power consumption. SLL Ge/SbSe thin films with different thickness of Ge and SbSe layers were prepared by magnetron sputtering system. The amorphous-to-crystalline transitions of SLL Ge/SbSe thin films were investigated through in situ film resistance measurement. The crystallization activation energy of SLL Ge/SbSe thin films was calculated from a Kissinger plot. The data retention time was estimated through isothermal timedependent resistance measurement by Arrhenius equation. The phase structure of the thin films annealed at different temperatures was investigated by using X-ray diffraction. Phase change memory cells based on the SLL [Ge(8 nm)/ SbSe(5 nm)] 4 thin films were fabricated to test and evaluate the switching speed and operation consumption.

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Section: Resultsmentioning

confidence: 99%

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Zhu

et al. 2015

J Mater Sci: Mater Electron

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“…However, the addition Ni into GST may lead to the formation of new covalent bonds with ionic tendency since the electronegativity of Ni (1.8) is lower than those of Sb (2.05) and Te (2.1) [17], and is expected to balance the two sides to achieve good properties.…”

Section: Introductionmentioning

confidence: 98%

Ni-doped GST materials for high speed phase change memory applications

Zhu

Zhang

Song

et al. 2015

Materials Research Bulletin

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“…In the usual way, doping other elements, such as Ge, Al, Cu, Ag, and In, etc. refs 16, 17, 18, 19, 20, into Sb-Te alloys can improve the thermal stability effectively. In recent years, Si has been chosen as a dopant due to its low cost and high efficiency.…”

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confidence: 99%

Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences

Guo

Zhang

et al. 2016

Sci Rep

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The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210–620 K) and Si concentration (0–33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagonal (HEX) phases can be attributed to the acceleratory crystallization of HEX phase by Si introduction. It illustrates that the risk of phase separation (Sb and Te) during the cyclic phase-change processes decreases with the increasing Si concentration. The enhanced crystallization behaviors can optimize the data retention ability and the long term stability of ST by Si doping, which are important indicators for phase change materials. The performance improvement has been analyzed qualitatively from the optical perspective.

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Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications

Cited by 52 publications

References 23 publications

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Ni-doped GST materials for high speed phase change memory applications

Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences

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