2019 IEEE Energy Conversion Congress and Exposition (ECCE) 2019
DOI: 10.1109/ecce.2019.8912296
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Investigation of Current Mirror Based Overcurrent Protection for 1200V 800A High Power SiC MOSFET Modules

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Cited by 11 publications
(1 citation statement)
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“…Protection methods against overcurrent or SC fault have been proposed in numerous previous studies. There are methods of directly measuring current using a shunt resistor or a current sensor [15]- [18], monitoring the change of / [19]- [22], monitoring the gate-source voltage and gate charge characteristics [23] and using sense FET or a current mirror [24], [25]. Among these techniques, the most common method applied to the automotive three-phase lowvoltage MOSFET driver circuit is the voltage from the drain to the source monitoring [26]- [30].…”
Section: Introductionmentioning
confidence: 99%
“…Protection methods against overcurrent or SC fault have been proposed in numerous previous studies. There are methods of directly measuring current using a shunt resistor or a current sensor [15]- [18], monitoring the change of / [19]- [22], monitoring the gate-source voltage and gate charge characteristics [23] and using sense FET or a current mirror [24], [25]. Among these techniques, the most common method applied to the automotive three-phase lowvoltage MOSFET driver circuit is the voltage from the drain to the source monitoring [26]- [30].…”
Section: Introductionmentioning
confidence: 99%