This essay presents the advantages of SiC power devices, while the short-circuit characteristics limit their development. The device short-circuit will seriously affect the efficiency of the use of the period. When a load short circuit occurs, both ends of the power MOSFET device will be directly connected to the high bus voltage; therefore, the short circuit process poses a great challenge to the device's ability to withstand high voltage, high current, and high junction temperature simultaneously. In this thesis, the short-circuit process of SiC power devices is investigated by designing a detection circuit, and two failure mechanisms of SiC MOSFET power devices are explained through the understanding of the failure mechanism.