Investigation of CuInSe2 nanowire arrays with core–shell structure electrodeposited at various duty cycles into anodic alumina templates

Cheng, Yu Song; Wang, Na Fu; Tsai, Yu‐Zen; Lin, Jia Jun; Houng, Mau Phon

doi:10.1016/j.apsusc.2016.10.207

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…This nonideal condition caused the dangling bond to become a carrier trap, which decreased the Schottky barrier's performance, because the nonideal material had a short carrier lifetime and a high number of carrier traps. 38 Moreover, poor diode characteristics of Ag/CuInSe 2 NWs can be explained by the following factors: (i) poor crystalline and boundary scattering form a carrier trap. 39 More important, because of the CuInSe 2 NWs have specific surface area and a border effect, its intensify carrier recombination at surface.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Cheng

Wang

Tsai

et al. 2017

ECS J. Solid State Sci. Technol.

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CuInSe 2 nanowire (NW) arrays were prepared in a heated electrolyte (45 • C) through anodized aluminum oxide template-assisted pulse electrodeposition. After the CuInSe 2 NWs were as-grown, grazing incidence X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) revealed the recrystallization status of the CuInSe 2 NWs annealed at temperatures ranging from 250 • C to 550 • C. The results indicated that the NWs underwent a phase transformation from the (204/220) plane to the (112) plane. Additionally, the material particle size and quantum dots were measured using HRTEM and ultraviolet/visible spectroscopy. The particle size of the as-grown CuInSe 2 NWs ranged from 3.8 to 8 nm. The as-grown CuInSe 2 NWs exhibited a blue-shift in the material absorption band at 1100 and 1200 nm compared with those annealed at 550 • C. The results of scanning electron microscopy had a diameter and length of 80 nm and 2.2 μm, respectively. Mott-Schottky and ohmic contact plots revealed that the CuInSe 2 NWs were p-type semiconductors. Moreover, the different leakage current mechanisms of the nonideal Schottky diode were studied. Finally, near-ideal Schottky barrier diodes were obtained at an annealing temperature of 550 • C, and their work function was estimated to be in the range of 5.04-5. Copper indium selenide (CuInSe 2 ) is commonly used in photovoltaic applications because of its excellent properties, including the presence of a direct bandgap, a high absorption coefficient (> 10 5 cm −1 ), and high thermal and electrical stabilities. 1 According to the literature, thin-film CuInSe 2 solar cells fabricated through electrodeposition exhibit a conversion efficiency of approximately 8.7%, 2 and quaternary compound (CuIn 1-x Ga x Se 2 ) devices exhibit a conversion efficiency of 15.4%.3 However, the minority carrier lifetime of the thin-film structure is short because minority carriers have the longest mobility path (depending on material thickness). Onedimensional (1D) semiconductor nanostructures such as nanorods, nanowires (NWs), and nanotubes have been extensively investigated. These nanostructures show great promise to replace traditional thinfilm structures in optoelectronic and photovoltaic devices because of their unique optical and electronic properties, and because the geometry of 1D nanostructures can influence device performance.4-9 The 1D nanostructure can provide light absorption and a short carrier mobility path (radius of the NW) for minority carrier extraction efficiency. On the other hand, 1D nanostructure carrier lifetimes can be extended by improving scattering mechanisms and lattice vibration. The carrier mobility depends on the grain boundary, and this phenomenon implies that energy loss and the transfer of heat energy inside the material causes lattice vibration. It's worth mentioning, single-phase nanostructure can be easily achieved by control growth mechanisms and annealed through anodized aluminum oxide (AAO) templateassisted pulse electrodeposition. 10,11 Moreover, in the ternary...

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Section: Resultsmentioning

confidence: 99%

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Cheng

Wang

Tsai

et al. 2017

ECS J. Solid State Sci. Technol.

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“…As described above, in a steady anodization the thickness of the dielectric barrier tB is proportional to the applied potential. However in the case of the exponential voltage decrease where a non-steady process takes place the barrier thickness depend on the anodized potential given by the equation (1), where is parameterized by 𝜂. Since the effectiveness of the exponential voltage decrease process is affected by the electrolyte temperature Te, the oxide barrier layer also strongly depend of the electrolyte temperature.…”

Section: Exponential Voltage Decreasementioning

confidence: 99%

“…Porous anodic alumina (PAA) has attracted a considerable interest as a template for the nanostructures growth [1][2][3][4][5][6][7]. Such template enables fabricating self-ordered hexagonal lattice with tunable geometric features by accurately adjusting the parameters involved in the anodization process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of porous anodic alumina (PAA) templates with straight pores and with hierarchical structures through exponential voltage decrease technique

Sacco

Florea

Cojocaru

2019

Surface and Coatings Technology

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The oxide barrier layer at the bottom of the pores has been successfully thinned by applying an exponential voltage decrease process followed by a wet chemical etching. The impact of the potential drop on the porous anodic alumina (PAA) structure has been deeply investigated, as well as the electrolyte temperature, the number of potential steps and the exponential decay rate. The results presented herein evidence that straight pores can be obtained and simultaneously remove the dielectric layer in spite of applying the exponential voltage decay during the PAA synthesis, through a smart adjustment between the anodization conditions and exponential voltage decay parameters. Additionally, the PAA structure can be tuned to fabricate hierarchically nanoporous templates with secondary pores ranging from 2 up to 10 branches. The presented simple procedure aims to become a standard step for the fabrication of the next generation PAA templates based devices.

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Organic nanostructure sensing layer developed by AAO template for the application in humidity sensors

Andika

Aziz

Ahmad

et al. 2018

J Mater Sci: Mater Electron

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Investigation of CuInSe2 nanowire arrays with core–shell structure electrodeposited at various duty cycles into anodic alumina templates

Cited by 5 publications

References 28 publications

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Fabrication of porous anodic alumina (PAA) templates with straight pores and with hierarchical structures through exponential voltage decrease technique

Organic nanostructure sensing layer developed by AAO template for the application in humidity sensors

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Investigation of CuInSe2 nanowire arrays with core–shell structure electrodeposited at various duty cycles into anodic alumina templates

Cited by 5 publications

References 28 publications

Characteristics of Quantum Dots and Single-Phase p-CuInSe2Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe2Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Fabrication of porous anodic alumina (PAA) templates with straight pores and with hierarchical structures through exponential voltage decrease technique

Organic nanostructure sensing layer developed by AAO template for the application in humidity sensors

Contact Info

Product

Resources

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Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact

Characteristics of Quantum Dots and Single-Phase p-CuInSe₂Nanowire Arrays Electrodeposited as Schottky Diodes with a Silver Contact