2012
DOI: 10.1016/j.jcrysgro.2012.06.023
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Investigation of crystal growth of 50 mm CZT using SiC pedestal and pBN crucible

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Cited by 5 publications
(4 citation statements)
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“…Growth feedstock consisted of 170 g of feedstock CdZnTe, 5% Zn, along with 0.6 mg In, corresponding to a concentration of 1.15 e +17 at/cm 3 and loaded in PBN crucible which was further inserted in quartz ampule and then sealed at high vacuum. The well-sealed ampule was placed on top of a quartz ampule with a SiC “coldfinger” in the center of vertical gradient freezing furnace. , The coldfinger increased heat extraction from the bottom of the ingot, ensuring a more controlled nucleation event and an initially convex solid/melt interface. The monitoring of temperature was done through five thermocouples which were applied along outside of ampule at different heights: 0.0, 2.2, 4.2, 5.4, and 8.1.…”
Section: Methodsmentioning
confidence: 99%
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“…Growth feedstock consisted of 170 g of feedstock CdZnTe, 5% Zn, along with 0.6 mg In, corresponding to a concentration of 1.15 e +17 at/cm 3 and loaded in PBN crucible which was further inserted in quartz ampule and then sealed at high vacuum. The well-sealed ampule was placed on top of a quartz ampule with a SiC “coldfinger” in the center of vertical gradient freezing furnace. , The coldfinger increased heat extraction from the bottom of the ingot, ensuring a more controlled nucleation event and an initially convex solid/melt interface. The monitoring of temperature was done through five thermocouples which were applied along outside of ampule at different heights: 0.0, 2.2, 4.2, 5.4, and 8.1.…”
Section: Methodsmentioning
confidence: 99%
“…The initial bell-shaped temperature profile helped to maintain the convex melt interface, and also resulted in intense fluid convection, improving isolation of surplus Te in melt and thus tumbling the formation of Te inclusions in solid . The melt-back, SiC coldfinger and bell-shaped temperature profile helped to ensure favorable solidification conditions at the critical beginning stages of the growth, which largely determine the crystal quality throughout the entire ingot. The shift toward a “Straight” temperature profile is necessary to ensure that the top third of the ingot solidifies in a controlled manner, at the target value of 0.5 to 1 mm/h. The growth procedure is described in greater detail and verified by experimental and numerical simulation results in our previous publication .…”
Section: Methodsmentioning
confidence: 99%
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