VGF bulk growth, crystalline perfection and mechanical studies of CdZnTe single crystal: A detector grade materials

Shkir, Mohd.; Ganesh, V.; AlFaify, S.; Black, Andrés; Diéguez, E.; Bhagavannarayana, G.

doi:10.1016/j.jallcom.2016.05.308

Cited by 37 publications

(40 citation statements)

References 46 publications

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“…The cut and polished rectangular specimens from grown crystals 6 , 12 were prepared and subjected to X-ray diffractometer (XRD) to confirm the growth direction. A typical photodetector consists of a semiconductor as a channel, with two ohmic contacts affixed to opposite ends of the channel as depicted in Fig.…”

Section: Methodsmentioning

confidence: 99%

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High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals

Shkir

Khan

Ashraf

et al. 2019

Sci Rep

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Herein, the optoelectrical investigation of cadmium zinc telluride (CZT) and indium (In) doped CZT (InCZT) single crystals-based photodetectors have been demonstrated. The grown crystals were configured into photodetector devices and recorded the current-voltage ( I-V ) and current-time ( I-t ) characteristics under different illumination intensities. It has been observed that the photocurrent generation mechanism in both photodetector devices is dominantly driven by a photogating effect. The CZT photodetector exhibits stable and reversible device performances to 632 nm light, including a promotable responsivity of 0.38 AW −1 , a high photoswitch ratio of 152, specific detectivity of 6.30 × 10 11 Jones, and fast switching time (rise time of 210 ms and decay time of 150 ms). When doped with In, the responsivity of device increases to 0.50 AW −1 , photoswitch ratio decrease to 10, specific detectivity decrease to 1.80 × 10 11 Jones, rise time decrease to 140 ms and decay time increase to 200 ms. Moreover, these devices show a very high external quantum efficiency of 200% for CZT and 250% for InCZT. These results demonstrate that the CZT based crystals have great potential for visible light photodetector applications.

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Section: Methodsmentioning

confidence: 99%

“…However, there are few drawbacks associated with CZT crystals. Firstly, it has relatively high concentrations of impurities and inherent defects that cause small drift length 11 , 12 . Secondly, low hole mobility, which caused by the trapping of charge carries 13 .…”

Section: Introductionmentioning

confidence: 99%

High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals

Shkir

Khan

Ashraf

et al. 2019

Sci Rep

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“…That is, the H V value decreases as the loading effect increases 19 . The experimental results of low ad and low bd 2 correspond to low surface energy and low plastic deformation in this material, and the positive values of a and b indicate the normal ISE behavior and applicability of the model 20 .…”

Section: Uv-vis-nir Spectrum Analysis Vcmt Crystal Is Classified As mentioning

confidence: 65%

“…3(b), where every plot of lnP versus lnd shows a linear relationship in which the slope represents the value of n. The best fitting data for n are given in Table 2. The table shows that the Meyer's index of every sample expresses the value n < 2, thereby indicating that these samples exhibit normal ISE behaviour 20,21 . Onitsch and Hanneman pointed out that if the value of n falls between 1 and 1.6, then the material is hard, and if n > 1.6, then the material is soft.…”

Section: Uv-vis-nir Spectrum Analysis Vcmt Crystal Is Classified As mentioning

confidence: 99%

“…3(c), where the intercept of the vertical axis is W and the slope of the straight line is A 1 ; both parameters are reported in Table 2. The literature 20,23,24 showed that the positive value of W represents the normal ISE. Thus, in the present indentation analysis, all the wafers show positive values (W), which suggest the occurrence of ISE behaviour.…”

Section: Uv-vis-nir Spectrum Analysis Vcmt Crystal Is Classified As mentioning

confidence: 99%

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Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Luan

Gao

et al. 2020

Sci Rep

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A high-quality cadmium manganese tellurium (cd 0.9 Mn 0.1 te: V or VcMt) crystal was successfully grown via modified Te solution vertical Bridgman method with vanadium doping. The crystal structure and quality were evaluated by powder X-ray diffraction analysis. An infrared transmission spectroscope measured the transmittance of the crystal at 64%, which would suggest that the grown crystal possessed high purity and crystallinity. Ultraviolet-visible-near-infrared spectroscopy analysis obtained the forbidden band width of approximately 1.577 eV. The current-voltage test indicated that the VCMT crystal had a high resistivity of 2.07 × 10 10 Ω·cm. Mechanical properties were measured by a Vickers microhardness tester. Crack surface morphology around the indentation was recorded. Furthermore, mechanical properties, such as microhardness, fracture toughness, brittleness index and yield strength were investigated and discussed. The thermal stability of the VCMT single crystal was determined by thermogravimetric analysis. A VCMT detector was fabricated with planar configuration structure, which showed a resolution of 11.62% of the 241 Am at 59.5 keV peak.

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An efficient piezoelectric single-crystal l-argininium phosphite: structural, Hirshfeld, electrical and mechanical analyses for NLO applications

et al. 2019

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VGF bulk growth, crystalline perfection and mechanical studies of CdZnTe single crystal: A detector grade materials

Cited by 37 publications

References 46 publications

High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals

High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

An efficient piezoelectric single-crystal l-argininium phosphite: structural, Hirshfeld, electrical and mechanical analyses for NLO applications

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