Investigation of conductivity and piezoresistance of n-type silicon on basis of quantum kinetic equation and model distribution function

Boǐko, I. I.; Kozlovskiy, S. I.

doi:10.1016/j.sna.2008.03.002

Cited by 14 publications

(11 citation statements)

References 22 publications

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“…It is based on the one-particle density matrix and the model nonequilibrium distribution function in form the shifted Fermi distribution [20][21][22]. For the accepted co-ordinate system the conductivity tensor of holes in the v-th sub-band has diagonal form…”

Section: Conductivity and Mobility Tensorsmentioning

confidence: 99%

“…For this case it is sufficient to calculate the imaginary part of permittivity ε (0) (ω, q) under condition |ω| ε k . The imaginary component of the dynamic dielectric function is [20][21][22] Im ε…”

Section: Conductivity and Mobility Tensorsmentioning

confidence: 99%

“…Correlator of the random scattering potential at scattering by acoustic phonons has the following form [20][21][22] …”

Section: Scattering By Longitudinal Acoustic Phononsmentioning

confidence: 99%

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Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains

Kozlovskiy

Sharan

2011

J Comput Electron

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The longitudinal piezoresistance of the p-type silicon nanowires oriented along the 100 , 110 and 111 crystallographic directions is examined at high uniaxial compressive and tensile elastic stresses ∼1 GPa. The detail research on base of the six-band model of the valence band involves quantum kinetic approach to calculation of the kinetic coefficients (conductivity, mobility) in classical nanowires with diameter that is significant higher the de Broglie wavelength of the band carriers. Two mechanisms of scattering (charged impurities and longitudinal acoustic phonons) are investigated. Qualitative agreement has been reached between calculated and known experimental data. A quantitative agreement with experiment is obtained in assumption about a formation of the stress concentration (stress raisers) in regions of nanowires that are depleted by the band carriers.

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Section: Conductivity and Mobility Tensorsmentioning

confidence: 99%

Section: Conductivity and Mobility Tensorsmentioning

confidence: 99%

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Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains

Kozlovskiy

Sharan

2011

J Comput Electron

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“…are (see [2,3] and Eqs. (6) and (7)): For quasielastic collisions we have the form (see [1]) 1) and (13) one obtains the system of equations for partial drift velocities:…”

Section: Herementioning

confidence: 99%

Influence of electron-electron drag on piezoresistance of n-Si

Boǐko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Another method applied here uses a set of balance equations which are moments of quantum kinetic equation in the space of wave vector (see Refs. [3] and [4]).…”

Section: Introductionmentioning

confidence: 99%