2011
DOI: 10.15407/spqeo14.02.183
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Influence of electron-electron drag on piezoresistance of n-Si

Abstract: Abstract. Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls.

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“…, and a I is a measure of the impurity electron localization 29 . Here we adopted a more detailed notation for the spin α of the exciton: the electron (hole) spin has index χ (η), and σ is the vector of Pauli matrices.…”
Section: Hamiltonianmentioning
confidence: 99%
“…, and a I is a measure of the impurity electron localization 29 . Here we adopted a more detailed notation for the spin α of the exciton: the electron (hole) spin has index χ (η), and σ is the vector of Pauli matrices.…”
Section: Hamiltonianmentioning
confidence: 99%