Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Wei, Huang; Lin, Yong Zhe; Chang, Sheng; Chang, Shoou Jinn

doi:10.3390/coatings10050504

Cited by 4 publications

(9 citation statements)

References 36 publications

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“…The experimental details are the same as those of our previous work with TE of Al. 28 Table 1 summarizes several basic parameters of the RRAM device with different IGO switching layers. A significant difference in the forming voltages between stacked IGO and the others can be observed.…”

Section: Results and Discussionmentioning

confidence: 99%

“…In previous work, we have discussed different mechanisms of the reset process with different TEs. 28 There are two main mechanisms that affect the filament, oxidation–reduction (redox) reaction, and Joule heat effect. The redox reaction is due to oxidation and reduction of oxygen vacancies in the switching layer to form or destroy the filament.…”

Section: Results and Discussionmentioning

confidence: 99%

“…On the contrary, there may be more oxygen vacancies and lesser oxygen ions in the indium oxide layer. Moreover, the mobility of the oxygen ions in indium is larger than that of gallium, which may accelerate 28 There are two main mechanisms that affect the filament, oxidation−reduction (redox) reaction, and Joule heat effect. The redox reaction is due to oxidation and reduction of oxygen vacancies in the switching layer to form or destroy the filament.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“… 20 − 27 Research on InGaO (IGO) as a switching layer in RRAM devices is still in its infancy, and our previous work has indicated that IGO is a good candidate for use in RRAM devices that exhibits the best performance with an Al top electrode (TE). 28 In this work, IGO is specifically investigated for use as the switching layer of the RRAM device. Indium ions (In 3+ ) contribute to distinct mobility owing to their particular electronic configuration of ( n – 1)d 10 ns 0 , where n is the principal quantum number.…”

Section: Introductionmentioning

confidence: 99%

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Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

et al. 2021

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The stability of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. For investigating the stability of RRAM devices, a stacked In x Ga 1– x O structure is designed as its switching layer in this study. Each stacked structure in the switching layer, formed via sputtering, consists of varying contents of gallium, which is a suppressor of oxygen vacancies; thus, the oxygen vacancies are well controlled in each layer. When a stacked structure with layers of different contents is formed, the original gradients of concentration of oxygen vacancies and mobility influence the set and reset processes. With the stacked structure, an average set voltage of 0.76 V, an average reset voltage of −0.66 V, a coefficient of variation of set voltage of 0.34, and a coefficient of variation of reset voltage of 0.18 are obtained. Additionally, under DC sweeps, the stacked RRAM demonstrates a high operating life of more than 4000 cycles. In conclusion, the performance and stability of the RRAM are enhanced herein by adjusting the concentration of oxygen vacancies via different compositions of elements.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

et al. 2021

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“…Moreover, several studies have indicated that different top electrodes (TEs) may interact with the switching layer and affect performance. 8,9 Considering the above concerns, different oxygen flows of single-layer Ga 2 O 3 with three different TEs (Al, Ti, and Pt) were fabricated and investigated in this study. To improve the endurance, ZnO was stacked on Ga 2 O 3 to create a native gradient of oxygen vacancy concentration.…”

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Enhanced Ga₂O₃-Based RRAM via Stacked Bilayer ZnO/Ga₂O₃

2022

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The stability and endurance of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. We used different top electrode (TE) and oxygen concentration flow, and stacked ZnO/Ga2O3 as switching layer to enhance the performance of Ga2O3-based RRAM. All switching layers were deposited by RF sputter in this work, and the oxygen vacancies were well controlled by controlling oxygen concentration flow. When a stacked structure was formed, the gradients of concentration of oxygen vacancies and mobility influenced the set and reset processes. With the stacked structure, there was an average set voltage of 1.5 V, and an average reset voltage of -0.7 V. Additionally, under DC sweeps, the stacked RRAM demonstrated a high operating life of more than 300 cycles. In conclusion, the performance and stability of the RRAM are enhanced by adjusting the concentration of oxygen vacancies via different compositions of elements.

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Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory

Bai,

Duan,

Qian

et al. 2023

Physica Status Solidi (a)

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In this letter, the effect of temperature on the switching characteristics and the conduction mechanism of the Ti/SiNx/Pt resistive random access memory device is investigated. The switching behavior of the device is investigated by comparing the I‐V curves of the device in the temperature range of RT‐653 K. The temperature dependence of the current and the conduction mechanism of the device within RT‐463 K is investigated. It is found that the device exhibits good bipolar switching behavior in the temperature range of RT‐463 K, and the LRS current and HRS current show an increasing and then decreasing trend with increasing temperature. There is a stronger temperature dependence of the LRS current and the conduction mechanism from ohmic conduction to Schottky emission under LRS, which is attributed to the involvement of the reactive electrode Ti in the reaction at a certain temperature and the generation of a TiNx layer. Based on the above phenomenon, it is believed that not only the temperature affects the reliability of the device, but also the influence of reactive electrodes cannot be ignored. This paper provides a reference for further preparation of SiNx‐based RRAM devices with higher reliability and wider temperature usage range.This article is protected by copyright. All rights reserved.

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Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Cited by 4 publications

References 36 publications

Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

Enhanced Ga₂O₃-Based RRAM via Stacked Bilayer ZnO/Ga₂O₃

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory

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Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Cited by 4 publications

References 36 publications

Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1–xO by the RF Sputtering Method

Stability-Enhanced Resistive Random-Access Memory via Stacked InxGa1–xO by the RF Sputtering Method

Enhanced Ga2O3-Based RRAM via Stacked Bilayer ZnO/Ga2O3

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory

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Product

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Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

Stability-Enhanced Resistive Random-Access Memory via Stacked In_xGa_1–xO by the RF Sputtering Method

Enhanced Ga₂O₃-Based RRAM via Stacked Bilayer ZnO/Ga₂O₃

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiN_x‐Based Resistive Random Access Memory