Enhanced Ga₂O₃-Based RRAM via Stacked Bilayer ZnO/Ga₂O₃

Abstract

The stability and endurance of a resistive random-access memory (RRAM) device over long-term use has been widely acknowledged as a pertinent concern. We used different top electrode (TE) and oxygen concentration flow, and stacked ZnO/Ga2O3 as switching layer to enhance the performance of Ga2O3-based RRAM. All switching layers were deposited by RF sputter in this work, and the oxygen vacancies were well controlled by controlling oxygen concentration flow. When a stacked structure was formed, the gradients of concentration of oxygen vacancies and mobility influenced the set and reset processes. With the stacked structure, there was an average set voltage of 1.5 V, and an average reset voltage of -0.7 V. Additionally, under DC sweeps, the stacked RRAM demonstrated a high operating life of more than 300 cycles. In conclusion, the performance and stability of the RRAM are enhanced by adjusting the concentration of oxygen vacancies via different compositions of elements.