Investigation of biaxial stresses in diamond films deposited on a silicon substrate by the HF CVD method

Bąk, Grzegorz; Fabisiak, K.; Klimek, L.; Kozanecki, Marcin; Staryga, E.

doi:10.1016/j.optmat.2007.02.034

Cited by 18 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To account for the stronger resonant Raman scattering effect of sp

bonded carbons,

has been scaled by a factor of 50 [ 32 ].

and

were estimated after the numerical deconvolution of each Raman spectrum [ 33 ]. The determination of the parameters is possible after numerical deconvolution of the experimental spectrum, shown for example in Figure 3 b.…”

Section: Resultsmentioning

confidence: 99%

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Łoś

Fabisiak

Paprocki

et al. 2021

Sensors

View full text Add to dashboard Cite

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

show abstract

“…To account for the stronger resonant Raman scattering effect of sp

bonded carbons,

has been scaled by a factor of 50 [ 32 ].

and

Section: Resultsmentioning

confidence: 99%

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Łoś

Fabisiak

Paprocki

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

“…The diamond quality was evaluated from the Raman spectra by calculating the quality factor using the equation, Qi = Idiamond / (Idiamond + Ia-carbon / 233), where, Idiamond and Iacarbon are the integrated intensities of the diamond peak and the sum of the integrated intensities of the nondiamond carbon bands, respectively. 31 It is worthy to note that the laser fluence had a linear influence on the growth rate and the quality factor at 248 nm, but a super-linear influence at 193 nm. A larger grain size, a higher deposition rate, and a higher diamond quality factor were obtained with UV laser irradiation at 193 nm than those obtained at 248 nm, although the laser fluence of the 193 nm laser was one order of magnitude lower than that of the 248 nm laser.…”

Section: Resultsmentioning

confidence: 99%

“…The diamond quality was evaluated from the Raman spectra by calculating the quality factor using the equation, Q i = I diamond /(I diamond + I a-carbon /233), where I diamond and I a-carbon are the integrated intensities of the diamond peak and the sum of the integrated intensities of the nondiamond carbon bands, respectively. 30 Figure 2c shows the quality factors plotted as a function of the laser fluence for the 193 nm and the 248 nm lasers. The diamond quality factor increased with respect to the laser fluence.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Effects of Laser Photolysis of Hydrocarbons at 193 and 248 nm on Chemical Vapor Deposition of Diamond Films

Constantin

Fan

Azina

et al. 2018

Crystal Growth & Design

View full text Add to dashboard Cite

In this work, the influence of ultraviolet (UV) laser photolysis of hydrocarbons on combustion chemical vapor deposition of diamond films was investigated at 193 and 248 nm.Although the output fluence of the 193 nm laser was one order of magnitude lower than that of the 248 nm laser, UV laser irradiations at 193 and 248 nm led to similar enhancement of diamond growth: a twofold increase in the diamond deposition rate and a 3% increase in diamond quality compared to those obtained without laser irradiation. In situ thermionic measurement of emission currents revealed that the diamond nucleation time was reduced from 9.5 min without laser irradiation to 4.2 and 7.0 min, respectively, with UV laser irradiations at 193 and 248 nm. These results suggest the advantages of using UV laser photolysis in diamond deposition achieved by suppressing nondiamond carbon accumulation. Spectroscopic investigation of the flame chemistry showed that UV laser irradiations of the diamond-forming combustion flames led to photo-2 generated reactive species, OH, CH, and C2, which play critical roles in diamond growth. The more pronounced flame chemistry change and diamond growth enhancement with UV laser irradiation at 193 nm than 248 nm is attributed to a higher photon energy, 6.4 eV, which is above the energetic dissociation threshold of most hydrocarbons for more efficient photodissociation.

show abstract

“…If the Raman line of diamond shifts towards values above or below ν 0 (for diamond monocrystal), this indicates that the studied sample is under compressive or tensile stresses, respectively. The residual stress, σ, can be calculated from the following relationship [31].…”

Section: The Raman Spectroscopymentioning

confidence: 99%

Orientation Dependence of Cathodoluminescence and Photoluminescence Spectroscopy of Defects in Chemical-Vapor-Deposited Diamond Microcrystal

et al. 2020

View full text Add to dashboard Cite

Point defects, impurities, and defect–impurity complexes in diamond microcrystals were studied with the cathodoluminescence (CL) spectroscopy in the scanning electron microscope, photoluminescence (PL), and Raman spectroscopy (RS). Such defects can influence the directions that microcrystals are grown. Micro-diamonds were obtained by a hot-filament chemical vapor deposition (HF CVD) technique from the methane–hydrogen gas mixture. The CL spectra of diamond microcrystals taken from (100) and (111) crystallographic planes were compared to the CL spectrum of a (100) oriented Element Six diamond monocrystal. The following color centers were identified: 2.52, 2.156, 2.055 eV attributed to a nitrogen–vacancy complex and a violet-emitting center (A-band) observed at 2.82 eV associated with dislocation line defects, whose atomic structure is still under discussion. The Raman studies showed that the planes (111) are more defective in comparison to (100) planes. What is reflected in the CL spectra as (111) shows a strong band in the UV region (2.815 eV) which is not observed in the case of the (100) plane.

show abstract

Investigation of biaxial stresses in diamond films deposited on a silicon substrate by the HF CVD method

Cited by 18 publications

References 11 publications

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Effects of Laser Photolysis of Hydrocarbons at 193 and 248 nm on Chemical Vapor Deposition of Diamond Films

Orientation Dependence of Cathodoluminescence and Photoluminescence Spectroscopy of Defects in Chemical-Vapor-Deposited Diamond Microcrystal

Contact Info

Product

Resources

About