Investigation of Au and Ag segregation on Fe(001) with soft X-ray absorption

Bonell, Frédéric; Lam, D. D.; Yoshida, Sadafumi; Takahashi, Y.; Shiota, Yoichi; Miwa, Shinji; Nakamura, Tetsuya; Suzuki, Y.

doi:10.1016/j.susc.2013.05.010

Cited by 7 publications

(7 citation statements)

References 29 publications

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“…One of the promising structures, which might have the required large PMA and VCMA effect, is a Cr/ultrathin Fe=MgO structure. The large interface anisotropy [40,41] and the suppression of the surface segregation [42] are the reasons why the large PMA and VCMA effect might be expected for this structure.…”

Section: Introductionmentioning

confidence: 90%

Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

et al. 2016

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We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface magnetic anisotropy energy of 2.1 mJ=m 2 is achieved in the Cr/ultrathin Fe=MgO structure. A large voltage-induced perpendicular magnetic anisotropy change is observed under the negative-bias voltage applications for the case of the Fe layer thinner than 0.6 nm. The amplitude of the voltage-induced anisotropy energy change exhibits a strong Fe-thickness dependence and it reaches as high as 290 fJ=Vm. The observed high values of the surface anisotropy and voltage-induced anisotropy energy change demonstrate the feasibility of voltage-driven spintronic devices.

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Section: Introductionmentioning

confidence: 90%

Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

et al. 2016

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“…We employed a fully epitaxial Cr/ultrathin Fe/MgO system as a standard system for the materials research of VCMA effect [133], because large interface magnetic anisotropy can be obtained due to the flat and well-defined Fe/MgO interface [134,135,136] when compared to MTJs with noble metal buffers, which can have the problem of surface segregation [137]. To evaluate the VCMA properties, we used molecular beam epitaxy to prepare orthogonally-magnetized MTJ structures that consisted of a MgO seed (3 nm)/Cr buffer (30 nm)/ultrathin Fe ( t Fe )/MgO ( t MgO = 2.3 nm)/Fe(10 nm) on MgO(001) substrates.…”

Section: Materials Research For a Large Vcma Effectmentioning

confidence: 99%

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

et al. 2019

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The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

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“…Ultra-thin Fe films grown epitaxially on Au(001) have been widely studied because of the very small lattice mismatch < 1 % and epitaxial growth conditions. 6 Thus, it was often the system of choice for studies of ultra-thin film phenomena, such as quantum well states 7,8 and interlayer exchange coupling. [8][9][10] In a recent publication, 5 we demonstrated that in the Fe/Au(001) system it is possible to observe the opening/closing of the magnetizationdependent spin-orbit gaps located near the Fermi level.…”

Section: Introductionmentioning

confidence: 99%

“…The results of several studies of Fe/Au(001) growth were summarized by Bonell et al. 6 Various surfacesensitive techniques were applied to determine the growth mode. The majority of studies agree that one monolayer (ML) of Au remains on the surface of 15-20 ML Fe films when deposited at room temperature (RT).…”

Section: Introductionmentioning

confidence: 99%

“…However, due to different experimental conditions there are a lot of discrepancies about the existence of a Au ML on the surface for thicker Fe films. 6 The Au overlayer leads to important changes in the properties of the Fe films. For example, calculations show that it is the Au monolayer which reduces the Fe magnetic moment as compared to the value for Fe/MgO(001).…”

Section: Introductionmentioning

confidence: 99%

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