Investigation of atmospheric corrosion by photon energy dependent luminescence and Raman spectroscopy in aged and freshly fractured g-,c-As2S3 with photosensitive realgar inclusions

Міца, В.; Holomb, R.; Marton, Aniko; Vereš, M.; Tóth, S.; Himics, L.; Lőrinczi, Á.; Popescu, M.

doi:10.1016/j.jnoncrysol.2016.09.022

Cited by 10 publications

(2 citation statements)

References 26 publications

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“…An even weaker broad band near 485 cm −1 is resolved only at higher excitation power density. This is the typical Raman spectrum of amorphous As 2 S 3 . Still, one should mention that earlier for bulk As 2 S 3 glass slightly different Raman spectra were reported, without clearly resolved maxima near 180 and 230 cm −1 , but rather a broad shoulder in that spectral range .…”

Section: Resultssupporting

confidence: 57%

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Azhniuk

Solonenko

Dzhagan

et al. 2018

Physica Status Solidi (b)

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As 2 S 3 :Cd films with nominal Cd content x up to 4 at.% were prepared by thermal evaporation. Their amorphous structure is confirmed by Raman spectroscopy. The film surface roughness estimated from atomic force microscopy does not exceed 1 nm. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy show a strong decrease of Cd content with the film depth. Peaks of CdS longitudinal optical phonon and its overtones emerging in the Raman spectra of films with x ! 2 at.% Cd are the evidence for the laser irradiation-induced formation of CdS crystallites in the As 2 S 3 :Cd films. The downward shift of the CdS Raman peak frequencies is mainly explained by tensile strain undergone by the CdS crystallites in the films caused by material transfer from the laser spot due to the photoplastic effect.

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Section: Resultssupporting

confidence: 57%

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Azhniuk

Solonenko

Dzhagan

et al. 2018

Physica Status Solidi (b)

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“…The Raman spectrum of the As 2 S 3 glass, similarly to the data of other authors, [37][38][39][40][41] contains a broad dominating maximum at 339 cm À1 and two weaker broad bands near 180 and 230 cm À1 as well as an even weaker broad band near 490 cm À1 . The most intense maximum at 335-340 cm À1 is ascribed to stretching vibrations of the As-S bond of corner-sharing AsS 3 (often denominated as AsS 3/2 ) pyramids in the glass network, basically resembling those existing in the structure of orpiment (crystalline As 2 S 3 ).…”

Section: Resultssupporting

confidence: 84%

Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy

Azhniuk,

Lopushansky,

Hasynets

et al. 2024

J Raman Spectroscopy

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Raman spectra of (As1–xBix)2S3 glass samples with x ≤ 0.2 measured at the excitation with above‐bandgap (532 nm) laser light at a relatively low power density (Pexc = 4 kW/cm2) clearly confirm the amorphous character, thereby markedly extending the known compositional interval of existence of the (As1–xBix)2S3 glass previously known (x ≤ 0.06). Spectra measured at an increased Pexc (40 kW/cm2) reveal a photostructural transformation in the illuminated area of the glass leading to an additional contribution of Bi–S bonds as well as to an increasing number of cage‐type As4S4 units with homopolar As–As bonds. A number of new features in a broad range up to about 1,000 cm−1, which emerge in the Raman spectra of the (As1–xBix)2S3 glasses with high (x ≥ 0.14) Bi content and increase in intensity with the exposure time, are related to a photochemical transformation, namely, oxidation of arsenic and sulphur on the (As1–xBix)2S3 glass surface with formation of units containing arsenate AsO43− and sulphate SO42− ions. These processes are irreversible and occur only in the presence of a sufficient amount of bismuth.

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Photoelectronic Properties

Tanaka¹,

Shimakawa²

2021

Amorphous Chalcogenide Semiconductors and Related Materials

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Investigation of atmospheric corrosion by photon energy dependent luminescence and Raman spectroscopy in aged and freshly fractured g-,c-As2S3 with photosensitive realgar inclusions

Cited by 10 publications

References 26 publications

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy

Photoelectronic Properties

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Investigation of atmospheric corrosion by photon energy dependent luminescence and Raman spectroscopy in aged and freshly fractured g-,c-As2S3 with photosensitive realgar inclusions

Cited by 10 publications

References 26 publications

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Laser‐Induced Formation of CdS Crystallites in Cd‐Doped Amorphous Arsenic Sulfide Thin Films

Photoinduced transformations in (As1–xBix)2S3 glass observed by Raman spectroscopy

Photoelectronic Properties

Contact Info

Product

Resources

About

Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy