Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Yang, Xu; Sun, Rongyan; Ohkubo, Yuji; Kawai, Kentaro; Arima, Kenta; Endo, Kazuhiko; Yamamura, Kazuya

doi:10.1016/j.electacta.2018.03.184

Cited by 46 publications

(20 citation statements)

References 27 publications

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“…Unfortunately, the improvement of the surface quality of PDCs has not been extensively focused upon. To date, a variety of ultra-precision polishing methods such as uid polishing [6,7], electrochemical polishing [8], and chemical-mechanical polishing (CMP) have been applied to obtain high-quality defect-free ceramic surfaces [5,9]. Among them, CMP is considered to be a powerful fabrication technology for removing material by combining chemical and mechanical action together, leading to the achievement of global planarization and ultra-smooth surfaces with no defects [5,10].…”

Section: Introductionmentioning

confidence: 99%

WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics

Chen

Cao

Wang

2020

Preprint

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The amorphous and heterogeneous microstructures of polymer-derived ceramics (PDCs) make it challenging to uniformly polish them without the appearance of obvious polishing defects. In this study, the surface characteristics of polymer-derived silicoaluminum carbonitride (SiAlCN) ceramics were investigated after mechanical polishing and chemical–mechanical polishing (CMP). The results showed the generation of polishing defects including scratches, pits, and comet tails after mechanical polishing; nonetheless, the surface quality was largely improved after CMP, providing an ultra-smooth surface (Ra = ~0.25 nm). The evolution of the surface morphology was characterized in detail and X-ray photoelectron spectroscopy was used to analyze the characteristics of chemical bond before and after the CMP. The polishing slurry dominated the corrosion process during CMP, inducing the oxidation of the SiCxNy phase; nonetheless, the so-formed oxidation products and carbon phase were removed by mechanical action. The obtained ultra-high smooth surface can promote practical application in the field of PDCs-based sensors.

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Section: Introductionmentioning

confidence: 99%

WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics

Chen

Cao

Wang

2020

Preprint

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“…It is widely used in high temperature, high pressure, high power high density, and radiation resistance integrated power electronic and optoelectronic devices. [1][2][3] In those applications, an ultra-smooth and defect-free SiC wafer is essentially important, which directly determines the component performance. 4 However, SiC is difficult to be machined for its high hardness and chemical inertness.…”

Section: Introductionmentioning

confidence: 99%

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

Feng

Zhao

Lyu

et al. 2021

Advances in Mechanical Engineering

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To eliminate the deep scratches on the 4H-SiC wafer surface in the grinding process, a PVA/PF composite sol-gel diamond wheel was proposed. Diamond and fillers are sheared and dispersed in the polyvinyl alcohol-phenolic resin composite sol glue, repeatedly frozen at a low temperature of −20°C to gel, then 180°C sintering to obtain the diamond wheel. Study shows that the molecular chain of polyvinyl alcohol-phenolic resin is physically cross-linked to form gel under low-temperature conditions. Tested by mechanical property testing machines, microhardness tester, and SEM. The results show that micromorphology is more uniform, the strength of the sol-gel diamond wheel is higher, the hardness uniformity is better than that of the hot pressing diamond wheel. Grinding experiments of 4H-SiC wafer were carried out with the prepared sol-gel diamond wheel. The influence of grinding speed, feed rate, and grinding depth on the surface roughness was investigated. The results showed that by using the sol-gel diamond wheel, the surface quality of 4H-SiC wafer with an average surface roughness Ra 6.42 nm was obtained under grinding wheel speed 7000 r/min, grinding feed rate 6 µm/min, and grinding depth 15 µm, the surface quality was better than that of using hot pressing diamond wheel.

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“…Electro-chemical assisted hybrid polishing methods on SiC wafer have been developed and studied by many researchers, including electrochemical mechanical grinding [5], electrochemical mechanical polishing (ECMP) [4,6], and electrochemical-assisted multi-wire saw [7]. In these studies, the SiC surface was modified to oxide the layer and softened to realize easier material removal.…”

Section: Introductionmentioning

confidence: 99%

“…In these studies, the SiC surface was modified to oxide the layer and softened to realize easier material removal. At the same time, the sub-surface damage (SSD) layer would be removed due to the formation of oxide layer on the surface [4][5][6][7][8]. The surface structure development and the electrochemical oxidation (ECO) mechanism in SiC were investigated in detail.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode

et al. 2020

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Electrochemical oxidation (ECO) has been used widely to oxidize single crystal Si wafers. Aiming at optimizing the ECO assisted machining methods, the oxidation behaviors of single- crystal silicon (100) wafer under potentiostatic mode are experimentally investigated. It is shown that the Si wafer can be electrochemically oxidized and the oxidized film thickness reaches to 239.6 nanometers in 20 min. The hardness of the oxidized surface is reduced by more than 50 percent of the original surface. The results indicate that the oxide thickness and the hardness can be controlled by changing the voltage. Based on the experimental findings, a hypothesis on the ECO mechanism under potentiostatic mode was proposed to explain the fluctuations of current density under specific applied voltage. The occurrence of the multiple peaks in the current density curve during the oxidation process is due to the formation of discharge channels, which was initiated from the defects at the interface between the oxide bottom and the substrate. This breaks the electrical isolation and leads to the discontinuous growth of the electrochemical oxide layer. The present work contributes to the fundamental understanding of the ECO behaviors for the single-crystal Si (100) wafer under potentiostatic mode.

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Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Cited by 46 publications

References 27 publications

WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics

WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode

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Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Cited by 46 publications

References 27 publications

WITHDRAWN: Ultra-Precision Polishing&nbsp;Method&nbsp;of&nbsp;Polymer-Derived&nbsp;Amorphous SiAlCN Ceramics

WITHDRAWN: Ultra-Precision Polishing&nbsp;Method&nbsp;of&nbsp;Polymer-Derived&nbsp;Amorphous SiAlCN Ceramics

Ultra-precision grinding of 4H-SiC wafer by PAV/PF composite sol-gel diamond wheel

Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode

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WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics

WITHDRAWN: Ultra-Precision Polishing Method of Polymer-Derived Amorphous SiAlCN Ceramics