Investigation of amorphous hydrogenated carbon layers as sacrificial structures for MEMS applications

Roth, A.; Kautzsch, Thoralf; Vogt, Mirko; Stegemann, Maik; Frohlich, Heiko; Breitkopf, Cornelia

doi:10.1109/icsens.2014.6985050

Cited by 1 publication

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“…Prediction and control of the evolution of void microstructures in silicon is a relevant topic in the semiconductor industry due to its wide range of applications such as being part of the production of pressure sensors [1], SON transistors [2][3][4], resonators [5,6], or even for microcooling [1]. All these applications have in common the prerequisite of generating a certain void cavity or empty space in silicon (ESS) below the main device structure or below a layer of silicon, i.e., a silicon-on-nothing (SON) layer.…”

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confidence: 99%

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Turuelo

Breitkopf

2023

Crystals

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The control and prediction of morphological changes in annealed void microstructures is an essential and powerful tool for different semiconductor applications, for example, as part of the production of pressure sensors, resonators, or other silicon structures. In this work, with a focus on the void shape evolution of silicon, a novel simulation approach based on the level-set method is introduced to predict the continuous transformation of initial etched nano/micro-sized cylindrical structures at different annealing conditions. The developed model, which is based on a surface diffusion formulation and built in COMSOL Multiphysics® (Stockholm, Sweden), is introduced and compared to experimental literature data as well as with other analytical approaches. Some advantages of the presented model include the capability of simulating other materials under similar phenomena, the simulation of any possible initial geometry, and the visualization of intermediate steps during the annealing processing.

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