Investigation of ALD or PVD (Ti-rich vs. N-rich) TiN metal gate thermal stability on HfO&lt;inf&gt;2&lt;/inf&gt; high-K

Wu, Lifu; Hónɡ, Yú; Li, X.; Pey, K. L.; Hsu, Keh‐Ying; Tao, Hun-Jan; Chiu, Yu‐Jing; Lin, C.T.; Xu, Jie; Wan, Haijun

doi:10.1109/vtsa.2010.5488933

Cited by 8 publications

(4 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Interfacial layer (IL) was grown to ~0. 8 capping layer was deposited on high-k layer. Next MOCVD TiN metal gates with different process conditions, which will be detailed in the following section, were deposited with Endura 5500 as work function layers.…”

Section: Methodsmentioning

confidence: 99%

“…The requirements for the metal gates are as follows: favorable work functions, low sheet resistance, thermal stability, and compatibility with high-k dielectric Among all the potential candidates for metal gate electrodes, TiN gates showed promising results such as thermal stability with the high-k gate dielectrics and process compatibility [5,6]. Currently, Titanium nitride (TiN) films deposited with atom layer deposition (ALD) and reactive sputter is widely studied as metal gate in semi-conductor technology [5][6][7][8][9]. In this work, TiN films were deposited by using a MOCVD technique.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Gao¹,

Yang²

2015

J Nanomed Nanotechnol

View full text Add to dashboard Cite

This work aimed to study on the effects of plasma treatment on flat band voltage (Vfb) and equivalent oxide thickness (EOT) using Metal-organic Chemical Vapor Deposition (MOCVD) TiN film as p-MOSFETs metal gate electrode. The plasma treatment conditions effect on the resistance and composition properties of MOCVD TiN, consequently, they can modulate work function and control threshold voltage. The effects of "plasma treatment" were imposed to favor the formation of TiN bonds, thus decreasing the rate TiC bond and favoring a crystallized stoichiometric TiN phase to increase PMOS Vfb shift. Meanwhile, plasma treatments accelerate interfacial oxide formation and increase EOT. On the other hand, EOT increases with the increase of plasma treatment time and power in this work, but Vfb does not always increase and reach a max value.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Gao¹,

Yang²

2015

J Nanomed Nanotechnol

View full text Add to dashboard Cite

show abstract

“…After the standard RCA clean of the 300-nm p-type silicon (100) wafer, a thin SiO 2 interfacial layer was formed by the dry oxide method, followed by a 2-nm-thick HfO 2 film. Then, a TiN thin film was deposited for suppressing oxygen out-diffusion 28) and followed by a TaN thin film. To realize the relation between electron-trapping behavior and annealing processes, the rapid thermal annealing (RTA) procedure with 400 C in oxygen ambient was utilized in the device before the TaN layer (referred to as Sample A) and/or after the TaN layer (referred to as Sample B), as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

Chiu

Chang

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this research, trap properties in n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with different annealing sequences have been studied on the basis of low-frequency (1/f) noise and random telegraph noise (RTN) analyses. The 1/f noise results indicate that the source of the drain current fluctuation is electron trapping. The higher trap density in the devices annealed before the TaN layer causes serious noise and lower trap energy in RTN results. The substitution mechanism explains that the increment of defects is due to the additional nitrogen atoms in HfO2. On the contrary, fewer defects in the devices annealed after the TaN layer are due to the effect of passivation in the TiN layer. The defect in HfO2 is the source of trapping/detrapping; thus, fewer defects cause the decrement of the fluctuation and the increment of the drain current. We believe that this process has a potential to remove defects in advanced MOSFETs.

show abstract

“…[14][15][16][17][18] In addition, oxygen and nitrogen vacancies are known to play an important role in the threshold voltage instability as a result of the oxide trapped charges and interface traps in MG/HfO 2 /SiO 2 structures during thermal treatment. [19][20][21][22][23][24][25][26] In particular, the annealing with oxygen and nitrogen has been used to passivate the defects in metal/dielectric interface caused by thermal processing of work function metal for various gate-electrode structures devices. Moreover, capping layers during thermal anneals have been used to manipulate the metal/dielectric interface and modify the work function.…”

Section: Introductionmentioning

confidence: 99%

Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

Huang

Gong

Huang

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This study examined the impact of positive bias temperature instability (PBTI) on n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) with TiN barrier layer sandwiched between metal gate electrode and HfO 2 dielectric. The experimental results clearly demonstrate that the diffusion mechanism of oxygen and nitrogen as a result of the post metallization treatment was the root cause of the PBTI. In this mechanism, the oxygen during the post metallization annealing (PMA) was diffused into TiN layer and replaced the nitrogen in the TiN layer. Subsequently, these replaced nitrogens were diffused into the HfO 2 , from which these replaced nitrogen atoms were used to passivate the defects in the HfO 2 . Results show that by increasing the thickness of TiN barrier layer, the driving current and the PBTI of n-MOSFET can be greatly improved. The larger the thickness of the TiN layer is, the better the PBTI reliability becomes.

show abstract

Investigation of ALD or PVD (Ti-rich vs. N-rich) TiN metal gate thermal stability on HfO<inf>2</inf> high-K

Cited by 8 publications

References 5 publications

Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Study on the Effect of Plasma Treatment on Flat-band-voltage and Equivalent Oxide Thickness using Metal-organic Chemical Vapor Deposition TiN Film as p-MOSFETS Metal Gate Electrode

Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors

Contact Info

Product

Resources

About