2018
DOI: 10.21272/jnep.10(5).05044
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Investigation of Absorber Layer Thickness Effect on CIGS Solar Cell in Different Cases of Buffer Layers

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“…ZnSe, which exhibits an energy band gap of 2.8 eV, is another important material for photovoltaic devices. ZnSe has been particularly used for Cu(In,Ga)Se 2 (CIGS) solar cells in view of the small lattice mismatch between ZnSe (a = 0.5667 nm) and CIGS (a = 0.56 − 0.58 nm) [88][89][90]. The electrodeposition of ZnSe is usually performed with an acidic electrolyte when the pH value is at 2-2.5.…”
Section: Znsementioning
confidence: 99%
“…ZnSe, which exhibits an energy band gap of 2.8 eV, is another important material for photovoltaic devices. ZnSe has been particularly used for Cu(In,Ga)Se 2 (CIGS) solar cells in view of the small lattice mismatch between ZnSe (a = 0.5667 nm) and CIGS (a = 0.56 − 0.58 nm) [88][89][90]. The electrodeposition of ZnSe is usually performed with an acidic electrolyte when the pH value is at 2-2.5.…”
Section: Znsementioning
confidence: 99%