“…Manufacturing methods for RF structures used in ion traps for quantum information processing have, however, achieved far finer feature sizes than 50 µm [32,57,58,33,59] and manufacture by photo-etch on sapphire or by CMOS production both appear possible for achieving feature sizes as small as 5µm [34]. RF carpets of this scale have been proposed, but not yet demonstrated, by others [31]. Ongoing R&D within the NEXT collaboration aims to produce an RF carpet by single-layer photo-etch on sapphire of pitch of 15µm for experimental studies of ion transport in xenon gas.…”