Investigation and evaluation of high power SiC MOSFETs switching performance and overshoot voltage

Yi, Peizhong; Cui, Yujia; Vang, Anthony; Wei, Lixiang

doi:10.1109/apec.2018.8341382

Cited by 16 publications

(7 citation statements)

References 9 publications

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“…Unlike electrolytic capacitors, the non-polarized property of film capacitors makes them more immune to reverse-connection errors and withstand exposure to a much higher voltage. The better self-healing property also ensures a safer response to occasional stresses, as typically encountered in real-world applications [17]. These all characteristics make the film capacitors good candidates for many power-conditioning duties in important applications like electric transportation, renewable energy, and industrial drives.…”

Section: Literature Review and Problem Statementmentioning

confidence: 99%

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Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Hasanah,

Djuriatno,

Ardhenta

et al. 2023

EEJET

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This paper explores some efforts to suppress the voltage surge appearing during the operation of a SiC-MOSFET-based half-bridge circuit in an inverter topology. The study is important to carry out, as the voltage surge problem does not come up when a Si-IGBT is used as the switching component in the half-bridge; however, some applications demand certain properties like what is found in a SiC MOSFET. Compared to Si-IGBT with rise-time/fall-time larger than 100 ns in general, the use of SiC MOSFET is preferable due to its much shorter switching time, less than 50 ns, which brings about a much lower switching loss and lower operating temperature. However, the choice of the usual electrolytic capacitor in the dc-link would produce an undesired voltage surge during the half-bridge operation. The origin of the surge is sometimes assigned to the inductance parasitic effect of the SiC-MOSFET high frequency. This research proves the benefit of a film capacitor to suppress the surge due to its lower equivalent series resistance (ESR) than that of the electrolytic capacitor. The results contribute to the consideration to take during the circuit realization in various applications, as there are not many papers yet found discussing the use of film capacitor in the dc-link of a SiC-MOSFET half-bridge inverter. This study also reveals the importance of the film capacitor placement during the design stage of SiC-MOSFET applications; moreover, motor controllers being equipped with an inverter such as described in this study have not been found yet in the market. The efforts investigated in this work would help to control the undesirable voltage spikes that frequently occur when applying a SiC-MOSFET to a half-bridge inverter design

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Section: Literature Review and Problem Statementmentioning

confidence: 99%

“…A smaller and lighter device would require a smaller dimension of the capacitor. A film capacitor may fulfill the requirements [17].…”

Section: Literature Review and Problem Statementmentioning

confidence: 99%

Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Hasanah,

Djuriatno,

Ardhenta

et al. 2023

EEJET

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“…Considering all these constrains (along with the space requirement constrain), the adopted solution was to implement the 15 mF C BUS with a combination of electrolytic and polypropylene film technologies: 12.6 mF of 550 V electrolytic capacitors (series connection) are used as the main energy bulk, whereas 2.4 mF of 1100 V film capacitors provide the required very low ESL and very high peak current [37]. For the identification of C 1,2 the considerations are similar, but in this case the requirement in terms of energy bulk for dynamic response is more relaxed due to the fast response of the DAB converter that feeds this DC link.…”

Section: DCmentioning

confidence: 99%

Design of a 350 kW DC/DC Converter in 1200-V SiC Module Technology for Automotive Component Testing

Alemanno

Ronchi²,

Rossi

et al. 2023

Energies

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In this paper, the design and implementation of a DC/DC converter for automotive component testing with state-of-the art performance is described. The converter is the core of a battery emulator for the characterization and development of automotive batteries, electronic chargers, traction inverters, DC-DC converters, E-motors and E-axles. Cutting edge performance, flexibility and compactness are obtained by exploiting 1200-V SiC modules, high switching frequency, planar transformer technology, suitable topology solutions and fast digital control strategies. The implemented system is a liquid-cooled, bidirectional converter with galvanic isolation capable of 350 kW continuous output power, output voltage range 48–1000 V, continuous output current up to 800 A (1600 A peak), voltage/current ramp-up time below 10/2 ms and 0.1% current/voltage accuracy. The entire instrument is implemented in a standard full-height 19-inch rack cabinet.

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“…In this case, if the avalanche ruggedness is not sufficiently high, there is a possibility of a catastrophic failure triggered by surge overvoltage and then an avalanche breakdown. [9][10][11][12] High surge voltage is generated by the extremely fast switching characteristics with a high slew rate of dI D /dt (I D : drain current) in the latest SiC modules. Although much research has been done to prevent failures of SiC modules by avalanche breakdown, [13][14][15] it is still possible to fail the modules due to the extremely high dI D /dt.…”

Section: Introductionmentioning

confidence: 99%

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

Tsuji¹,

Iwamuro²

2023

Jpn. J. Appl. Phys.

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The avalanche ruggedness of unclamped inductive switching of 1.2 kV SiC trench MOSFETs was investigated with load inductances ranging from 1 μH to 5 mH. The SiC trench MOSFETs showed an extremely high avalanche current of more than 6000 A cm−2 at 1 μH, which was 3.3 times higher than state-of-the-art 1.2 kV Si IGBTs. This indicates that modules of SiC trench MOSFETs could show higher ruggedness for parallel connections. In addition, SiC trench diodes in which only the n+ source regions were eliminated from the MOSFETs were fabricated to verify the failure mechanism by the activation of parasitic bipolar transistors. In medium-load inductances from 10 μH to 100 μH, the MOSFETs showed lower avalanche ruggedness than the diodes, and failures were caused by the activation of the parasitic bipolar transistors. For inductances outside that range, the MOSFETs showed identical ruggedness to the diodes, and the failures were caused by the source metals melting.

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Investigation and evaluation of high power SiC MOSFETs switching performance and overshoot voltage

Cited by 16 publications

References 9 publications

Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Design of a 350 kW DC/DC Converter in 1200-V SiC Module Technology for Automotive Component Testing

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

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