An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range
Abstract:The avalanche ruggedness of unclamped inductive switching of 1.2 kV SiC trench MOSFETs was investigated with load inductances ranging from 1 μH to 5 mH. The SiC trench MOSFETs showed an extremely high avalanche current of more than 6000 A cm−2 at 1 μH, which was 3.3 times higher than state-of-the-art 1.2 kV Si IGBTs. This indicates that modules of SiC trench MOSFETs could show higher ruggedness for parallel connections. In addition, SiC trench diodes in which only the n+ source regions were eliminated from the… Show more
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