“…12. This is consistent with the results in [10] where hot carrier injection is located in the overlap region causing R ON to drift. Fig.…”
Section: Resultssupporting
confidence: 93%
“…However, operation at 5 V introduces high electric fields in the transistor structure which may cause other degradation effects to occur, and consequently reduce the transistor life time. At 3.3 V, the electric fields are lower and the results both from this paper and [10] indicate no significant drift of any transistor parameter, therefore a lifetime longer than 10 years is expected. Fig.…”
Section: Resultsmentioning
confidence: 66%
“…Transistors with W = 0.2 mm were subjected to DC-stress for 26 h at room temperature in class-AB quiescent bias points at V g = 1.2 V and both V d = 5 and V d = 3.3 V. No burn-in was performed; IV characteristics were measured on a virgin device and subsequently after stress for calculation of drift in transistor parameters. At V g = 1.2 V and V d = 3.3 V, no major degradation was observed after 26 h as evident in the very low gate current in the order of fA [10]. At V g = 1.2 V and V d = 5 V, hot carrier injection is expected [10] as observed in the increase of gate current.…”
Section: Resultsmentioning
confidence: 99%
“…At V g = 1.2 V and V d = 3.3 V, no major degradation was observed after 26 h as evident in the very low gate current in the order of fA [10]. At V g = 1.2 V and V d = 5 V, hot carrier injection is expected [10] as observed in the increase of gate current. The LDMOS showed a R ON drift of 2.8% after 26 h while the quiescent current and threshold voltage were unaffected, see output characteristics in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The thin gate oxide together with the high electric fields may make the transistor vulnerable to hot carrier effects and gate tunneling. The reliability and stress mechanisms at various DC bias points of the LDMOS were investigated in [10]. This work also includes long-term DC and large-signal stress at the quiescent point equivalent to class-AB operation.…”
Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without extra masks or process steps. Radio frequency (RF) performance for Wireless local area network (WLAN) frequencies and in X-band at 8 GHz is investigated by load-pull measurements in class AB operation for both 3.3 and 5 V supply voltage. Results at 2.45 GHz showed 290 mW/mm output power density with 17 dB linear gain and over 45% power added efficiency (PAE) at 4 dB compression at a supply voltage of 5 V. Furthermore, results in X-band at 8 GHz show 8 dB linear gain, 320 mW/mm output power density and over 22% PAE at 4 dB compression. Third-order intermodulation measurements at 8 GHz revealed OIP3 of 18.9 and 21.9 dBm at 3.3 and 5 V, respectively. The transistors were also tested for reliability which showed no drift in quiescent current after 26 h of DC stress while high-power RF stress showed only small extrapolated drift at 10 years in output power density. This is to the authors' knowledge the first time high output power density in X-band is demonstrated for integrated LDMOS transistors manufactured in a 65 nm CMOS process without extra process steps.
“…12. This is consistent with the results in [10] where hot carrier injection is located in the overlap region causing R ON to drift. Fig.…”
Section: Resultssupporting
confidence: 93%
“…However, operation at 5 V introduces high electric fields in the transistor structure which may cause other degradation effects to occur, and consequently reduce the transistor life time. At 3.3 V, the electric fields are lower and the results both from this paper and [10] indicate no significant drift of any transistor parameter, therefore a lifetime longer than 10 years is expected. Fig.…”
Section: Resultsmentioning
confidence: 66%
“…Transistors with W = 0.2 mm were subjected to DC-stress for 26 h at room temperature in class-AB quiescent bias points at V g = 1.2 V and both V d = 5 and V d = 3.3 V. No burn-in was performed; IV characteristics were measured on a virgin device and subsequently after stress for calculation of drift in transistor parameters. At V g = 1.2 V and V d = 3.3 V, no major degradation was observed after 26 h as evident in the very low gate current in the order of fA [10]. At V g = 1.2 V and V d = 5 V, hot carrier injection is expected [10] as observed in the increase of gate current.…”
Section: Resultsmentioning
confidence: 99%
“…At V g = 1.2 V and V d = 3.3 V, no major degradation was observed after 26 h as evident in the very low gate current in the order of fA [10]. At V g = 1.2 V and V d = 5 V, hot carrier injection is expected [10] as observed in the increase of gate current. The LDMOS showed a R ON drift of 2.8% after 26 h while the quiescent current and threshold voltage were unaffected, see output characteristics in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The thin gate oxide together with the high electric fields may make the transistor vulnerable to hot carrier effects and gate tunneling. The reliability and stress mechanisms at various DC bias points of the LDMOS were investigated in [10]. This work also includes long-term DC and large-signal stress at the quiescent point equivalent to class-AB operation.…”
Laterally diffused metal oxide semiconductor (LDMOS) transistors with 10 V breakdown voltage have been implemented in a 65 nm Complementary metal oxide semiconductor (CMOS) process without extra masks or process steps. Radio frequency (RF) performance for Wireless local area network (WLAN) frequencies and in X-band at 8 GHz is investigated by load-pull measurements in class AB operation for both 3.3 and 5 V supply voltage. Results at 2.45 GHz showed 290 mW/mm output power density with 17 dB linear gain and over 45% power added efficiency (PAE) at 4 dB compression at a supply voltage of 5 V. Furthermore, results in X-band at 8 GHz show 8 dB linear gain, 320 mW/mm output power density and over 22% PAE at 4 dB compression. Third-order intermodulation measurements at 8 GHz revealed OIP3 of 18.9 and 21.9 dBm at 3.3 and 5 V, respectively. The transistors were also tested for reliability which showed no drift in quiescent current after 26 h of DC stress while high-power RF stress showed only small extrapolated drift at 10 years in output power density. This is to the authors' knowledge the first time high output power density in X-band is demonstrated for integrated LDMOS transistors manufactured in a 65 nm CMOS process without extra process steps.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
