Inverted‐Structural Self‐Powered Gan/PZT/ITO UV Photodetector Enhanced by Ferroelectric Modulation

Chen, Zhengbang; Lin, Xianqi; Lin, Shuixiu; Ren, Jinlong; Wan, Lingyu; Peng, Biaolin

doi:10.1002/aelm.202300588

Cited by 6 publications

References 63 publications

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Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Zhang,

Li,

Zhang

et al. 2024

Adv Funct Materials

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In‐memory computing and sensing can break through the limit of the traditional Von Neumann architecture where information storing and computing units are separated. Recently the topographic creation of a ferroelectric domain wall in separation of two antiparallel domains in LiNbO3 single‐crystal films integrated with the Si substrate has been the focus of such research. Here, the additional freedom of the light stimulus is reported to modulate the domain wall current significantly, enabling applications in nonvolatile domain wall memory, photodetector, and image recognition processor. These measurements shows the fantastic photosensitivity of 2D domain walls where the photocurrent varies nonlinearly against the accumulative pulse number. With this observation, an associated learning model is constructed to stimulate neuromorphic computing (with a recognition accuracy of 90%) using an artificial neuromorphic network of domain walls. The research promotes the multifold development of artificial intelligence using domain‐wall nanodevices sensitive to both optical and electrical stimulus.

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Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Zhang,

Li,

Zhang

et al. 2024

Adv Funct Materials

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Realization of Self‐Powered High‐Performance Photodetection via Electrostatic Field Enhancement and Dark Current Suppression

Chen,

Lin,

Liu

et al. 2024

Adv Energy and Sustain Res

Self Cite

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Self‐powered photodetectors (PDs) are particularly attractive in the construction of environmentally friendly and sustainable Internet of Things. Utilizing dual functions of PTFE of electrostatic field enhancement and dark current suppression, a high‐performance self‐powered ITO/PTFE/TiO2/GaN UV PD is developed herein. The introduction of PTFE not only significantly reduces the dark current, but also facilitates the separation of photogenerated carriers by coupling the internal electrostatic field at the PTFE/TiO2 interface with the built‐in electric field of the TiO2/GaN heterojunction. With 0 V bias, the light‐to‐dark current (Ilight/Idark) ratio of the PD with PTFE is improved by 2297 times and the response time is faster by 1.69/2.96 times compared to the ITO/TiO2/GaN PD. In addition, a microstructured M‐ITO/PTFE/TiO2/GaN PD with micrometer‐sized cylindrical TiO2 arrays exhibits a high Ilight/Idark ratio of 3.65 × 105, a responsivity of 280.1 mA W−1, a high detectivity of 1.97 × 1013 Jones, and a response time of 4.3/3.0 ms under 360 nm illumination. Our strategy provides a promising way to develop high‐performance self‐powered PD.

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Hybrid self-powered UV photodetector with a sandwich structure of asymmetric interdigitated electrodes

Chen,

Lin,

Zhang

et al. 2024

J. Mater. Chem. C

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Inverted‐Structural Self‐Powered Gan/PZT/ITO UV Photodetector Enhanced by Ferroelectric Modulation

Cited by 6 publications

References 63 publications

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Realization of Self‐Powered High‐Performance Photodetection via Electrostatic Field Enhancement and Dark Current Suppression

Hybrid self-powered UV photodetector with a sandwich structure of asymmetric interdigitated electrodes

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