Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Abstract

In‐memory computing and sensing can break through the limit of the traditional Von Neumann architecture where information storing and computing units are separated. Recently the topographic creation of a ferroelectric domain wall in separation of two antiparallel domains in LiNbO3 single‐crystal films integrated with the Si substrate has been the focus of such research. Here, the additional freedom of the light stimulus is reported to modulate the domain wall current significantly, enabling applications in nonvolatile domain wall memory, photodetector, and image recognition processor. These measurements shows the fantastic photosensitivity of 2D domain walls where the photocurrent varies nonlinearly against the accumulative pulse number. With this observation, an associated learning model is constructed to stimulate neuromorphic computing (with a recognition accuracy of 90%) using an artificial neuromorphic network of domain walls. The research promotes the multifold development of artificial intelligence using domain‐wall nanodevices sensitive to both optical and electrical stimulus.