Inversion layer on the Ge(001) surface from the four-probe conductance measurements

Wojtaszek, Mateusz; Lis, Jakub; Zuzak, Rafał; Such, Bartosz; Szymoński, Marek

doi:10.1063/1.4891858

Cited by 17 publications

(46 citation statements)

References 16 publications

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“…In the case of three-dimensional currents the results depend on the absolute distances between electrodes. The experimental points closely reproduced the relevant scaling laws 7 . Here we report on resistance measurements for Ge(001):H in the same experimental settings as in Ref.…”

Section: A Resistance Analysissupporting

confidence: 61%

“…We remark that the insensitivity of the SFL to passivation explains conductance measurements in the same way as in Ref. 7. Indeed, the inversion layer is not destroyed by hydrogen adsorption.…”

Section: B Scanning Tunneling Spectroscopy and Microscopy Datasupporting

confidence: 49%

“…The reduced dimensionality of the current was interpreted as a result of FLP followed by the creation of an inversion layer beneath the surfaces on n-type doped samples. In that paper 7 we discussed the dimensional assignment in more details. Starting from the current flow equation, we showed that current confinement in the direction normal to the surface results in a scale independence of resistance measurements.…”

Section: A Resistance Analysismentioning

confidence: 99%

“…Here we report on resistance measurements for Ge(001):H in the same experimental settings as in Ref. 7. We applied the four point probe method.…”

Section: A Resistance Analysismentioning

confidence: 99%

“…In our recent paper 7 we demonstrated that the surface Fermi level is pinned close to the valence band maximum for Ge(001). In that letter we concentrated on the conductance data and their interpretation.…”

Section: Introductionmentioning

confidence: 99%

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Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

Wojtaszek

Zuzak

Godlewski

et al. 2015

Journal of Applied Physics

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To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge( 001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly, for the passivated surface it is located below the top of the valence band allowing scanning tunneling microscopy imaging within the band gap. We argue that the well known electronic mechanism behind band bending does not apply and a more complicated scenario involving ionic degrees of freedom is therefore necessary. Experimental techniques involve four point probe electric current measurements, scanning tunneling microscopy and spectroscopy.

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Section: A Resistance Analysissupporting

confidence: 61%

Section: B Scanning Tunneling Spectroscopy and Microscopy Datasupporting

confidence: 49%

Section: A Resistance Analysismentioning

confidence: 99%

“…Here we report on resistance measurements for Ge(001):H in the same experimental settings as in Ref. 7. We applied the four point probe method.…”

Section: A Resistance Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

Wojtaszek

Zuzak

Godlewski

et al. 2015

Journal of Applied Physics

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Atomic Wires on Ge(001):H Surface

Kolmer

Lis

Szymoński

2017

On-Surface Atomic Wires and Logic Gates

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Search for a Metallic Dangling-Bond Wire on n-Doped H-Passivated Semiconductor Surfaces

et al. 2016

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We have theoretically investigated the electronic properties of neutral and n-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomicscale interconnects exhibiting metallic conduction for use in on-surface circuitry. Whether neutral or doped, DB lines are prone to suffer geometrical distortions or have magnetic ground-states that render them semiconducting. However, from our study we have identified one exception -a dimer row fully stripped of hydrogen passivation. Such a DB-dimer line shows an electronic band structure which is remarkably insensitive to the doping level and, thus, it is possible to manipulate the position of the Fermi level, moving it away from the gap. Transport calculations demonstrate that the metallic conduction in the DB-dimer line can survive thermally induced disorder, but is more sensitive to imperfect patterning. In * To whom correspondence should be addressed † Centro de Física de Materiales (CFM) ‡ DTU Nanotech ¶ Center for Nanostructured Graphene (CNG) § Donostia International Physics Center (DIPC) Ikerbasque conclusion, the DB-dimer line shows remarkable stability to doping and could serve as a one-dimensional metallic conductor on n-doped samples.

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Inversion layer on the Ge(001) surface from the four-probe conductance measurements

Cited by 17 publications

References 16 publications

Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

Atomic Wires on Ge(001):H Surface

Search for a Metallic Dangling-Bond Wire on n-Doped H-Passivated Semiconductor Surfaces

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