Inversion-asymmetry splitting of the conduction band in InSb

Seiler, David G.; Bajaj, Bhushan D.; Stephens, A. E.

doi:10.1103/physrevb.16.2822

Cited by 72 publications

(47 citation statements)

References 37 publications

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“…Surprisingly, the spin splitting is more of a BIA-type rather than an SIA-type, contradicting the conventional knowledge that an SIA-type term described by H 2 is responsible for spin splitting in strained semiconductors [23,25,26,27,28,29]. Theoretically, the Dresselhaus term H 1 is a bulkinversion asymmetry term that appears even in the absence of strain.…”

Section: Fig 1: Direction Of the Internal Magnetic Fieldcontrasting

confidence: 42%

“…Without applied strain, the conduction band exhibits a spin-splitting that is small and cubic in k, described by H 1 . In [29] the application of diagonal does not induce any observable spin splitting whereas the application of shear strain induces a splitting linear in k, described by H 2 . Relatively large stress-induced splitting of the Fermi surfaces occurs in the lower concentration (n = 1.4 × 10 15 − 2.0 × 10 17 cm −3 ) samples [29].…”

Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

“…In [29] the application of diagonal does not induce any observable spin splitting whereas the application of shear strain induces a splitting linear in k, described by H 2 . Relatively large stress-induced splitting of the Fermi surfaces occurs in the lower concentration (n = 1.4 × 10 15 − 2.0 × 10 17 cm −3 ) samples [29]. The energy splitting dispersion switches from k 3 in the unstrained case to k when strain (stress) above 1kbar is applied, in accordance to H 2 becoming dominant over H 1 .…”

Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

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Spin splitting and spin current in strained bulk semiconductors

Bernevig

Zhang

2005

Phys. Rev. B

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We present a theory for two recent experiments in bulk strained semiconductors [1,2] and show that a new, previously overlooked, strain spin-orbit coupling term may play a fundamental role. We propose simple experiments that could clarify the origin of strain-induced spin-orbit coupling terms in inversion asymmetric semiconductors. We predict that a uniform magnetization parallel to the electric field will be induced in the samples studied in [1,2] for specific directions of the applied electric field. We also propose special geometries to detect spin currents in strained semiconductors. 72.15. Gd Spin manipulation in semiconductors has seen remarkable theoretical and experimental interest in recent years with the advent of spin-electronics and with the realization that strong spin-orbit coupling in certain materials can influence the transport of carriers in so-called spintronics devices [3]. In particular, the issue of creating spin polarization of carriers in nonmagnetic semiconductors with spin-orbit coupling using only electric fields has caused a flurry of theoretical and experimental activity [4,5,6,7,8,9,10,11,12,13,14,15,16]. Two kinds of theories of spin-polarization under the action of an electric field have been put forward. The first kind, dating back since the mid 1980's [9], predicts the existence of a spatially homogeneous net spin polarization perpendicular to the applied electric current in two dimensional samples with spin-orbit interaction. This effect is dissipative and has been recently observed experimentally [17]. There also exist two very recent [4,5] theories predicting non-dissipative, intrinsic spin currents with the spin polarization and flow direction perpendicular to each other and to the electric field. This effect does not create a bulk magnetization but, if observed, can be used for spin injection, and its validity is being experimentally tested at the present time. One of the theories [5] predicts a spin current polarized out of plane and flowing perpendicular to the in-plane electric field applied on a 2-dimensional semiconductor sample exhibiting Rashba spin-orbit coupling. As long as the Rashba spin splitting is large enough, the spin conductivity is 'universal' (e/8π ) in the sense that it does not depend on the value of the coupling. The other effect [4] appears in the valence band of the bulk samples and is proportional to the spin-orbit splitting of the valence bands (to the difference between the Fermi momenta of the heavy and light-hole bands).In the first part of this letter we analyze the theory behind two recent experiments in bulk strained semiconductors [1,2] where an electric-field-induced uniform homogeneous spin polarization upon an applied electric field is observed. We make the case that the observed spinsplitting (whose origin is puzzling) and spin polarization is due to a previously overlooked strain-spin-splitting term, and propose easy experimental checks of our theory.In the second part of this letter we predict the appearance of an intrinsic spin po...

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Section: Fig 1: Direction Of the Internal Magnetic Fieldcontrasting

confidence: 42%

Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

Section: Fig 1: Direction Of the Internal Magnetic Fieldmentioning

confidence: 99%

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Spin splitting and spin current in strained bulk semiconductors

Bernevig

Zhang

2005

Phys. Rev. B

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“…This spin splitting can be the consequence of a bulk inversion asymmetry (BIA) of the underlying crystal [e.g., a zinc blende structure (Dresselhaus, 1955)], and of a structure inversion asymmetry (SIA) of the confinement potential (Ohkawa and Uemura, 1974;Bychkov and Rashba, 1984). Strain gives rise to a third contribution to B = 0 spin splitting (Seiler et al, 1977;Howlett and Zukotynski, 1977). A fourth contribution can be the low microscopic symmetry of the atoms at an interface (Rössler and Kainz, 2002).…”

Section: Spin Precessionmentioning

confidence: 99%

“…For bulk InSb, the effect of strain on spin splitting has been studied by measuring Shubnikov-de Haas oscillation (Seiler et al, 1977) and cyclotron resonance . D'yakonov et al (1986) analyzed the Hanle effect in the presence of strain in order to obtain C 3 = 20 eVÅ for GaSb, C 3 = 5 eVÅ for GaAs, and C 3 = 3 eVÅ for InP.…”

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confidence: 99%

Spin‐dependent Transport of Carriers in Semiconductors

Winkler

2007

Handbook of Magnetism and Advanced Magnetic Materials

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This article reviews spin-dependent transport of carriers in homogenous threedimensional and two-dimensional semiconductors. We begin with a discussion of optical orientation of electron spins, which allows both the creation and detection of spin-polarized carriers in semiconductors. Then we review non-equilibrium spin flow including spin drift and diffusion caused by electric fields and concentration gradients. A controlled spin precession is possible both in external magnetic fields and in effective magnetic fields due to a broken inversion symmetry. Although the Coulomb interaction does not couple to the spin degree of freedom, it affects the spin-dependent transport via the spin Coulomb drag. In gyrotropic media, the optical creation of spin-oriented electrons gives rise to spin photocurrents, which reverse their direction when the radiation helicity is changed from left-handed to right-handed. The reverse process is possible, too, i.e., an electric current in a gyrotropic medium gives rise to a spin polarization in the bulk of the sample.

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