1984
DOI: 10.1002/pssb.2221260102
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Deformation Potentials of k = 0 States of Tetrahedral Semiconductors

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Cited by 329 publications
(93 citation statements)
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“…This is comparable to that of other IV group semiconductors [113,114]. The pressure coefficient of α-rhombohedral boron, A g = −17 meV/GPa, is similar to those of various semiconductors, for example, −19 meV/GPa for Si and −16 meV/GPa for Ge [116,117].…”
Section: Gap Problemsupporting
confidence: 73%
See 1 more Smart Citation
“…This is comparable to that of other IV group semiconductors [113,114]. The pressure coefficient of α-rhombohedral boron, A g = −17 meV/GPa, is similar to those of various semiconductors, for example, −19 meV/GPa for Si and −16 meV/GPa for Ge [116,117].…”
Section: Gap Problemsupporting
confidence: 73%
“…The pressure coefficient A g is related to the deformation potential a g by (1) where B is bulk modulus. Usually, A g is negative and its absolute value is greater in insulators than in semiconductors [113][114][115]. As a consequence, for insulators, the band closure occurs at relatively low pressures.…”
Section: Gap Problemmentioning
confidence: 99%
“…Therefore, for these materials such as AlN, the band splitting follows the behavior for p states and the electronic states shift almost linearly under strain which can be described by the deformation potentials b or d [16]. Consequently, the splittings, i.e.…”
Section: Unusual Nonlinear Strain Dependence Of Valance-band Splittinmentioning
confidence: 99%
“…All material parameters are chosen the same as in Ref. [9] for temperature at 77K, except that the deformation potential c 1 of GaAs is slightly modified from −6.8eV to −7.1eV so that a 1 + a 2 + c 1 = −9.8eV is in agreement with the experimental measurements [26] and the valence-band offset between GaAS and InAs used here is 0.26 eV according to the model solid theory [27]. To correct the band gap of SPS and alloy due to the bowing effect, we add a correction term −0.4x(1 − x)eV to the diagonal element for the s-like bond orbital in the Hamiltonian, where x is the effective alloy composition of the SPS or alloy at a given y ′ .…”
Section: B Electronic Structuresmentioning
confidence: 99%
“…The deformation potentials a 1 , a 2 , b, c 1 , d can be found in Ref. [23][24][25][26]. The linear interpolation and virtual crystal approximations used to obtain the corresponding parameters for the barrier material (Al 0.24 Ga 0.24 In 0.52 As).…”
Section: Theoretical Approachmentioning
confidence: 99%