Inverse spin Hall effect and spin pumping in the polycrystalline noncollinear antiferromagnetic 
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Singh, Braj Bhusan; Roy, Koustuv; Chelvane, J. Arout

doi:10.1103/physrevb.102.174444

Cited by 20 publications

(15 citation statements)

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“…A modified FMR setup was used to detect ISHE in these samples, the details of which are described elsewhere. [ 39–43 ] Further, in‐plane angular dependent measurement of the voltage with respect to the external magnetic field was performed, to disentangle the contribution of spin pumping and other spin rectification effects.…”

Section: Methodsmentioning

confidence: 99%

Spin Pumping and Inverse Spin Hall Effect in Iridium Oxide

et al. 2021

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Large spin‐to‐charge conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g., Pt, W, etc.), topological insulators, and antiferromagnets are usually considered because they exhibit high spin–orbit coupling (SOC). In addition to the above materials, 5d transition metal oxide, for example, iridium oxide (IrO2) is a potential candidate which exhibits high SOC strength. Here a study of spin pumping and inverse spin Hall effect (ISHE), via ferromagnetic resonance (FMR), in IrO2/CoFeB system is reported. By investigating the in‐plane angular dependence of the ISHE voltage, the individual contribution of spin pumping and other spin rectification effects in the magnetic layer is identified. The authors' analysis shows significant contribution of spin pumping effect to the ISHE signal. It is shown that polycrystalline IrO2 thin film exhibits high spin Hall conductivity and spin Hall angle which are comparable to the values of Pt.

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Section: Methodsmentioning

confidence: 99%

Spin Pumping and Inverse Spin Hall Effect in Iridium Oxide

et al. 2021

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“…ISHE measurements have been performed by connecting a nanovoltmeter over two ends of the sample (sample size: 3 mm × 2 mm). The details of the ISHE set-up can be found elsewhere [11,12,[23][24][25][26][27][28].…”

Section: Methodsmentioning

confidence: 99%

“…However there are only a few HMs in the periodic table and usually they are quite expensive. On the other hand recent works show antiferromagnets(AFM) exhibit high spin-orbit coupling and efficient transfer of spin angular momentum via antiferomagnetic spin waves [10][11][12]. Thus AFMs offer a good replacement for HMs as they also exhibit high SOI and there are many AFMs yet to be explored.…”

Section: Introductionmentioning

confidence: 99%

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Spin pumping and inverse spin Hall effect in CoFeB/IrMn heterostructures

Roy,

Mishra,

Gupta

et al. 2021

Preprint

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The spin current based electronics, known as spintronics, is the promising technology to replace the charge current based technology. Spintronics based devices allow miniaturization of the device and faster response. The study of spin current efficiency in different materials is one of the emergent research topics in modern days. Spin pumping and inverse spin Hall effect (ISHE) are popular tools to study the spin to charge current conversion efficiency in the materials. In last one decade, ISHE and spin pumping are heavily investigated in ferromagnet (FM)/ heavy metal (HM) heterostructures. Recently the antiferromagnetic (AFM) materials are found to be a good replacement of heavy metals (HM) for these kind of studies. Faster dynamics, exhibiting very high spin-orbit coupling, absence of stray field, efficient propagation of spin current make AFM to be a good replacement of HMs. Understanding the role of different FM layers in a FM/AFM heterostructure for ISHE or spin pumping study is very important for spin to charge conversion physics. In this context we have performed the ISHE in CoFeB/ IrMn heterostructures. Spin pumping study is carried out for Co60F e20B20(12nm)/Cu(3nm)/Ir50M n50(tnm)/AlOx(3nm) samples where t value varies from 0 to 10 nm. The Cu(3 nm) buffer layer is used which is less than the spin diffusion length(∼8 nm) of Cu to improve the IrMn growth. The 3 nm Cu layer allows the unperturbed spin current propagation in the heterostructures. Damping of all the samples is higher than the single layer CoFeB which indicates that the spin pumping is due to the presence of IrMn. Further the spin pumping in the samples are confirmed by ISHE measurement. The real part of spin mixing conductance (g ↑↓ r ) = 0.704 ± 0.01 × 10 18 m −2 is found to be maximum in IrMn(2 nm) sample from the ISHE analysis. The large Spin Hall angle was also found to be ∼ 0.30 for all the samples.

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“…97 Cubic L2 1 is a metastable antiferromagnetic phase, while D0 22 is a ferrimagnetic phase. 143 4.2.2 Anomalous Hall effect in Mn 3 Ge and Mn 3 Ga. Similar to Mn 3 Sn, Mn 3 Ge and Mn 3 Ga also show AHE due to their noncollinear magnetic structure together with hence induced nonzero Berry curvature.…”

Section: Mn 3 Gementioning

confidence: 96%