Mica was used as a supporting matrix for composite phase change materials (PCMs) in this work because of its distinctive morphology and structure. Composite PCMs were prepared using the vacuum impregnation method, in which mica served as the supporting material and polyethylene glycol (PEG) served as the PCM. Fourier transform infrared and X-ray diffraction analysis confirmed that the addition of PEG had no effect on the crystal structure of mica. Moreover, no chemical reaction occurred between PEG and mica during the vacuum impregnation process, and no new substance was formed. The maximum load of mica-stabilized PEG was 46.24%, the phase change temperature of M 400 /PEG was 46.03°C, and the latent heat values of melting and cooling were 77.75 and 77.73 J•g −1 , respectively. The thermal conductivity of M 400 /PEG was 2.4 times that of pure PEG. The thermal infrared images indicated that the thermal response of M 400 /PEG improved relative to that of pure PEG. The leakage test confirmed that mica could stabilize PEG and that M 400 /PEG had great form-stabilized property. These results demonstrate that M 400 /PEG has potential in the field of building energy conservation.
Many intriguing physical properties, such as frustrated magnetic structure and non-zero Berry curvature, appear in the magnetic alloys kagome structures due to their special lattice structures and symmetries, which can...
Fe3Sn2, a ferromagnetic alloy with a kagome lattice, has attracted much attention from research communities owing to its special crystal structure and symmetry, which gives rise to numerous intriguing magneto-electronic properties, including the topological Hall effect, skyrmionic bubbles, Dirac cones, and Weyl points. To study such physical properties, Fe3Sn2 epitaxial films without buffer layers are in urgent need. In this work, we fabricated the Fe3Sn2 epitaxial films without buffer layers using the facing-target magnetron sputtering method, and their magneto-electronic transport properties were investigated systematically. It is found that the sign of the Hall resistivity slope in a high-field region is reversed when the temperature decreases below 100 K, suggesting a temperature-induced transition of charge carriers from electrons to holes. Moreover, a non-negligible topological Hall resistivity subtracted from the anomalous Hall resistivity is depicted, and its value is comparable to that of the Fe3Sn2 single crystals. These results not only offer a clear understanding of ferromagnetic Fe3Sn2 films with the kagome lattice but also provide guidance for fabrication and application of epitaxial Fe3Sn2 films.
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