INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

Meneghesso, Gaudenzio; Magistrali, F.; Sala, D.; Vanzi, Massimo; Canali, C.; Zanoni, Enrico

doi:10.1016/s0026-2714(97)00050-4

Cited by 13 publications

(6 citation statements)

References 22 publications

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“…Au based contacts have proven to be a significant reliability issue at elevated temperatures in GaAs and InGaAs based HEMTs (17). In AlGaN/GaN based HEMTs, ohmic contacts with standard Au-based metallization seem to warrant sufficient stability under elevated temperature life-testing (18).…”

Section: Ohmic Contact Reliabilitymentioning

confidence: 99%

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Moens¹,

Banerjee²,

Constant³

et al. 2016

ECS Trans.

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Section: Ohmic Contact Reliabilitymentioning

confidence: 99%

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Moens¹,

Banerjee²,

Constant³

et al. 2016

ECS Trans.

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“…[1][2][3][4][5] In spite of the extraordinary material properties of the AlGaN/GaN heterostructure system, such as high mobility, high saturation velocity and good thermal conductivity, the main impediment of this technology is lack of reliability. 12 To date, Ni/Au gate metallization has been the most widely used in AlGaN/GaN HEMTs reliability studies. They are hotelectron-induced trap degradation, 6 crystallographic-defect formation through the inverse piezoelectric effect, [7][8][9] electric-field driven mechanism under off-state conditions, 10 gate sinking 11 and Ohmic contact degradation.…”

Section: Introductionmentioning

confidence: 99%

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Liu

Kang

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inEffects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes Appl. Phys. Lett. 105, 083501 (2014); 10.1063/1.4894093 Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures J. Vac. Sci. Technol. B 29, 021002 (2011); 10.1116/1.3545811 120 -nm -T-shaped-Mo ∕ Pt ∕ Au -gate Al Ga N ∕ Ga N high electron mobility transistors J. Vac. Sci. Technol. B 23, L13 (2005); 10.1116/1.2013315 Effect of thermal annealing on 120 nm -T-shaped-Ti ∕ Pt ∕ Au -gate Al Ga N ∕ Ga N high electron mobility transistors J.We have demonstrated significant improvements of AlGaN/GaN high electron mobility transistors ͑HEMTs͒ dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ϳ−45 to Ϫ65 V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to Ϫ100 V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by ϳ15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.56 ϫ 10 8 . The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.16ϫ 10 7 at V DS = 5 V and 6.29ϫ 10 5 V DS = 40 V due to the larger gate leakage current at higher drain bias voltage.

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“…First, the lateral diffused metal will immerse in Schottky barrier region (i.e., InAlAs layers) and therefore increase the reverse gate leakage current [16,17]. Second, thermal activation metal-metal and metal-semiconductor interdiffusions lead to Ohmic contact degradation [18]. The degradation of Ohmic contact is the result of Ga out-diffusion into the top Au layer and the diffusion of Au into the GaAs.…”

Section: Methodsmentioning

confidence: 99%

Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

Chen

Cheng

Huang

et al. 2010

Solid-State Electronics

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INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

Cited by 13 publications

References 22 publications

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Comparison of DC performance of Pt/Ti/Au- and Ni/Au-gated AlGaN/GaN high electron mobility transistors

Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

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