2018
DOI: 10.1002/aelm.201800655
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Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator

Abstract: Mechanical flexibility and electrical reliability establish the fundamental criteria for wearable and implantable electronic devices. In order to receive intrinsically stretchable resistive switching memories, both the electrode and storage media should be flexible yet retain stable electrical properties. Experimental results and finite element analysis reveal that the formation of 3D liquid metal galinstan (GaInSn) calabash bunch conductive network in poly(dimethyl siloxane) (PDMS) matrix allows GaInSn@PDMS c… Show more

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Cited by 53 publications
(59 citation statements)
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References 48 publications
(110 reference statements)
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“…[4] Researchers have leveraged the high conductivity (3 × 10 4 S cm −1 ) and fluidity of LMs to synthesize composites [5] with high thermal conductivity, [6][7][8] high electrical conductivity, [9][10][11][12][13] enhanced/tunable mechanical properties, [14,15] electrical/mechanical self-healing capabilities, [16,17] and stimuli responsivity. [18][19][20][21][22] Like other natural and synthetic composites, proliferation of multifunctional materials for emerging technologies. Such an approach becomes increasingly relevant as polymer chemists discover new synthetic routes to tune polymer networks.…”
mentioning
confidence: 99%
“…[4] Researchers have leveraged the high conductivity (3 × 10 4 S cm −1 ) and fluidity of LMs to synthesize composites [5] with high thermal conductivity, [6][7][8] high electrical conductivity, [9][10][11][12][13] enhanced/tunable mechanical properties, [14,15] electrical/mechanical self-healing capabilities, [16,17] and stimuli responsivity. [18][19][20][21][22] Like other natural and synthetic composites, proliferation of multifunctional materials for emerging technologies. Such an approach becomes increasingly relevant as polymer chemists discover new synthetic routes to tune polymer networks.…”
mentioning
confidence: 99%
“…In recent years, researchers have successfully achieved the effective ways for improving the conductive ability of MOF materials by adsorbing small molecules and ions, which take full advantages of the unique periodic and porous structure of MOFs. These progresses also bring the new application of MOFs into the field of resistive memories 29,30,192‐195 …”
Section: Organic‐inorganic Hybrid Materials For Resistive Memorymentioning
confidence: 99%
“…To date, a variety of functional materials have been discovered for resistive switching memory applications, 12,15 including organic materials, 17‐23 inorganic compounds, 24‐27 and organic‐inorganic hybrid materials, 28‐32 in either single‐component or multiple‐component form. Among these, organic‐based and organic‐inorganic hybrid materials have aroused particular interests due to their fascinating properties 21,30,33‐37 .…”
Section: Introductionmentioning
confidence: 99%
“…[ 20 ] Meanwhile, the clear mismatch in terms of elastic modulus between the rigid functional layers and the elastic substrate makes the integrated structure mechanically unstable (such as exfoliation and crack generation) during dynamic stretching, leading readily to device failure. [ 21,22 ]…”
Section: Introductionmentioning
confidence: 99%