Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities

Abstract

High‐performance stretchable and twistable nonvolatile memory devices with logic‐in‐memory functionality are highly desired for the development of future wearable electronics such as smart clothing. However, it is challenging to fabricate these memory devices using rigid functional materials based on conventional film deposition and patterning techniques. Herein, the first intrinsically stretchable and twistable resistive switching memory is reported using spin‐coated poly(dimethyl siloxane) elastomer as the storage medium and printed liquid metal as the electrodes. The memory device is found to exhibit a reliable resistive switching behavior under up to 30% stretching strain and 90° torsional deformation, possessing a large memory window (≈102) and an excellent retention (>104 s). Under 30% strain, stretching–release endurance of >500 cycles as well as excellent data integrity during the dynamic stretching–release process is demonstrated. Beyond data storage, logic‐in‐memory computation prototype represented by a one‐bit full adder is successfully implemented within four operation steps based on three stretched memory cells. This work will be highly valuable in materials and structure design towards the development of high‐performance and multifunctional wearable electronic modules and systems.

Combining Electrospinning and Electrode Printing for the Fabrication of Stretchable Organic Electrochemical Transistors

“…Given intrinsically conductive electrodes underpin the electrochemical performance of devices, the conductivity of these conjugated organic materials must not be compromised under the typically mechanical stresses and strains that are encountered when wear electronics. Indeed, this remains the principal challenge of the field, despite the many fabrication [11] and performances [12,13] improvements of stretchable devices.…”

Gate‐Deterministic Remote Doping Enables Highly Retentive Graphene‐MXene Hybrid Memory Devices on Plastic

“…It is expected that a choice of substrates with optimized mechanical properties can further increase the flexibility of GFETs since other components involved, that is, the ion‐gel and graphene, can obviously endure higher mechanical stresses. [ 44 ] The nonvolatile and retention properties were characterized by measuring the drain current after the cyclic test. Even after 1000 cycles of bending, the retention characteristics of the Ti 3 C 2 T X /TiO 2 ‐nanoflake‐incorporated ion‐gel gated GFETs were similar to those in the initial state, as shown in Figure 6b.…”

Flexible and Stretchable Memristive Arrays for in-Memory Computing

“…(B) The wearable healthcare-monitoring device integrated with Ag 2 S-based stretchable memristive devices (Jo et al, 2021). (C) The implementation of the MIG logic with the memristive device (Lu et al, 2021). (D) The stretchable memristive crossbar array with a resistive switching layer of composite material (TPU: Ag NPs) under stretching strain (Yang et al, 2018).…”

“…Organic-based stretchable memristive devices such as PDMS/ carbon nanotubes (CNTs)/maltoheptaose-block-polyisoprene (MH-b-PI)/Al (Hung et al, 2017) and Cu@GaIn/PDMS/Cu@ GaIn (Lu et al, 2021) have been extensively studied. For instance, Lu et al successfully demonstrated stretchable and twistable PDMS-based memristive devices for in-memory digital computing (Lu et al, 2021) (Figure 4C). On the basis of FIGURE 5 | Stretchable memristive array with structural design for in-memory computing.…”