Intrinsic Threshold Current Density of Domain Wall Motion in Nanostrips With Perpendicular Magnetic Anisotropy for Use in Low-Write-Current MRAMs

Fukami, Shunsuke; Suzuki, T.; Ohshima, Norikazu; Nagahara, K.; Ishiwata, N.

doi:10.1109/tmag.2008.2002370

Cited by 29 publications

(20 citation statements)

References 11 publications

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“…Our strips with a Co/Pt multilayer had two-thirds of the , two times the thickness, wider width, smaller , and almost the same pinning field, compared to the strips with CoCrPt used in Tanigawa's study [4]. A recent simulation [9] reveals that threshold current density for a strip with PMA is largely proportional to and thickness, while it is almost completely independent of and the stripe width over 0.2 m. This leads to the expected threshold current density of A/m for our strips. Nevertheless, we could not observe DW depinning induced by current until A/m .…”

Section: Resultsmentioning

confidence: 78%

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

et al. 2008

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We have proposed detecting a domain wall behavior in a strip with perpendicular magnetic anisotropy by measuring both extraordinary Hall effect and domain wall resistance with unique placement of three via contacts. By using this detecting technique, we have confirmed that the domain wall can be initialized at the boundary of the stepped structure of a Co/Pt multilayer strip. We have observed nucleation independent of the current direction and the propagation depending on it. We could not find any domain wall motion by spin-transfer torque from the boundary until 1:8 2 10 12 A/m 2 , probably because of the smaller polarization and/or the larger damping constant of the Co/Pt multilayer.

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Section: Resultsmentioning

confidence: 78%

Current-Driven Domain Wall Motion, Nucleation, and Propagation in a Co/Pt Multi-Layer Strip with a Stepped Structure

et al. 2008

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“…12,45,46) This prediction was based on the fact that the intrinsic pinning, i.e., the energy difference between Bloch and Néel DWs, can be varied by changing the width or thickness of the wire. Hence, the threshold current, which is proportional to the intrinsic pinning, can also depend on the wire geometry.…”

Section: Progress In Study Of Current-induced Domain Wall Motionmentioning

confidence: 99%

Current-driven magnetic domain wall motion and its real-time detection

Kim

Yoshimura

Ono

2017

Jpn. J. Appl. Phys.

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Current-controlled magnetic domain wall motion has opened the possibility of a novel type of shift register memory device, which has been optimistically predicted to replace existing magnetic memories. Owing to this promising prospect, intensive work has been carried out during the last few decades. In this article, we first review the progress in the study of current-induced magnetic domain wall motion. Underlying mechanisms behind the domain wall motion, which have been discovered during last few decades, as well as technological achievements are presented. We then present our recent experimental results on the real-time detection of current-driven multiple magnetic domain wall motion, which directly demonstrates the operation of a magnetic domain wall shift register.

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“…[1][2][3] In these devices, the motion of DWs is induced by external driving forces, magnetic field and/or electrical current, whose magnitude is larger than the threshold value for the motion. In order to assess the reliability of the device operation, one needs the knowledge of thermally activated subthreshold motion, so called "creep" motion.…”

Section: Domain Wall Creep In "Gamn…asmentioning

confidence: 99%