2018
DOI: 10.1038/s41598-018-31490-7
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Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory

Abstract: The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by means of Density Functional Theory. While the system of corrugation crests organized in a honeycomb super-lattice of nano-metric side returned by calculations is compatible with atomic microsc… Show more

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Cited by 20 publications
(28 citation statements)
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“…Moreover, a clear correlation is found between the integrated intensities in the 1260-1460 cm -1 and 1550-1710 cm -1 regions. These results could be the signature of the coexistence of different BL structures which can have close formation energies as evidenced by the theoretical work of Cavalluci et al [18], but the structure and Raman signature relationship still remains to be established.…”
Section: Discussionmentioning
confidence: 65%
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“…Moreover, a clear correlation is found between the integrated intensities in the 1260-1460 cm -1 and 1550-1710 cm -1 regions. These results could be the signature of the coexistence of different BL structures which can have close formation energies as evidenced by the theoretical work of Cavalluci et al [18], but the structure and Raman signature relationship still remains to be established.…”
Section: Discussionmentioning
confidence: 65%
“…In the literature, there is an intense debate about the BL atomic structure. Several BL structures have been proposed and investigated theoretically [17,18]. The scanning tunneling microscopy (STM) images commonly show a (6 × 6) structure of BL which do not agree with the low-energy electron diffraction (LEED) patterns showing a 6!3 × 6!3"30° reconstruction [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%
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“…The first carbon layer, which is commonly referred to as the buffer layer, undergoes a (6sqrt3x6sqrt3)R30°reconstruction and always presents between graphene and SiC. Despite the fact that the carbon atoms in the buffer layer are arranged in a graphene-like honeycomb structure, a significant number of carbon atoms in this layer are strongly bound to the silicon atoms of the SiC(0,001) surface [7,8]. As a result, in the electronic structure, the buffer layer exhibits graphenelike σ bands but fails to do so with π bands which are responsible for linear dispersion (Dirac cones) typical for graphene [9].…”
Section: Introductionmentioning
confidence: 99%
“…With little exceptions, however, these require some sort of manipulation of the sheet: in general nano-electronics requires doping to increase the density of states at the Fermi energy or to open a gap, which can be achieved by chemical substitutions [11], introduction of adatoms [12] or defects [13,14] or structure modulation [15,16]; for photovoltaics [9] different functionalization are required, depending on the specific use proposed (anode, cathode or photoactive layer [17]). Catalysis or environmental applications, such as water filtering, generally require sheet alteration, such as perforations of tailored size [18].…”
Section: Introductionmentioning
confidence: 99%