This work reports an electronic and micro-structural study of an appealing system for optoelectronics: tungsten disulfide (WS) on epitaxial graphene (EG) on SiC(0001). The WS is grown via chemical vapor deposition (CVD) onto the EG. Low-energy electron diffraction (LEED) measurements assign the zero-degree orientation as the preferential azimuthal alignment for WS/EG. The valence-band (VB) structure emerging from this alignment is investigated by means of photoelectron spectroscopy measurements, with both high space and energy resolution. We find that the spin-orbit splitting of monolayer WS on graphene is of 462 meV, larger than what is reported to date for other substrates. We determine the value of the work function for the WS/EG to be 4.5 ± 0.1 eV. A large shift of the WS VB maximum is observed as well, due to the lowering of the WS work function caused by the donor-like interfacial states of EG. Density functional theory (DFT) calculations carried out on a coincidence supercell confirm the experimental band structure to an excellent degree. X-ray photoemission electron microscopy (XPEEM) measurements performed on single WS crystals confirm the van der Waals nature of the interface coupling between the two layers. In virtue of its band alignment and large spin-orbit splitting, this system gains strong appeal for optical spin-injection experiments and opto-spintronic applications in general.

Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional theory (DFT) calculations. Two types of defects with different contrast were observed on a flat terrace by STM and AFM.Their STM contrast varies with bias voltage. In STS, they showed characteristic peaks at different energies, 1.1 and 1.4 eV. Comparison with DFT calculations indicates that they correspond to clusters of 3 and 4 Si dangling bonds, respectively. The relevance of these results for the optimization of graphene synthesis is discussed.

Graphene monolayer grown by Si evaporation from the 0001 surface of SiC displays a moiré pattern of corrugation whose structure is ambiguous: different measurements and theoretical studies show either protruding bumps surrounded by valleys, or, reversely, wells surrounded by crests. Here we address the fine structure of monolayer graphene on SiC by means of Density Functional Theory, using a model including the full symmetry of the system and the substrate (1648 atoms) and therefore realistically reproducing the experimental sample. We find that accurate treatment of the vdW interactions between monolayer and the underlying substrate-bound buffer layer is crucial in stabilizing one or the opposite corrugation pattern, which explain the different results and measurement available in the literature. Our study indicates that at low temperature a state more closely following the topography of the underneath buffer layer is stabilized, while others are metastable. Since environmental conditions (e.g. temperature or doping) can influence the vdW forces and reduce the energy differences, this system is prone to externally driven switching between different (opposite) corrugation states. In turn, corrugation is related to local reactivity and to electronic properties of graphene. This opens to potentially interesting applications in nano-electronics or tailored graphene chemical functionalization.