Intrinsic resolutions of DEPFET detector prototypes measured at beam tests

Andricek, L.; Caride, José António; Doležal, Z.; Drásal, Z.; Esch, S.; Frey, A.; Furletova, Y.; Furletov, S.; Geisler, C.; Heindl, Stefan Michael; Iglesias, Cristina; Knopf, J.; Koch, M.; Kodyš, P.; Koffmane, Christian; Kreidl, Christian; Krüger, H.; Kvasnička, P.; Lacasta, C.; Malina, Lukáš; Mariñas, C.; Ninković, J.; Reuen, L.; Richter, R.; Rummel, S.; Scheirich, J.; Schneider, J.-L.; Schwenker, B.; Vázquez, P.; Vos, M.; Weiler, T.; Wermes, N.

doi:10.1016/j.nima.2011.02.015

Cited by 23 publications

(22 citation statements)

References 8 publications

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“…The physics model implemented in SiPxlDigi has been validated against DEPFET test beam data [11]. For the validation a simulation of 120 GeV/c pions in a 450 µm thick DEPFET detector has been performed and particular focus has been given on correct explanation of cluster size measurements and signal charge generation, namely for inclined tracks.…”

Section: Results and Models Validationmentioning

confidence: 99%

Silicon Simulation Code for Belle II and ILC

Drásal¹,

Prothmann²,

Schwenker³

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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Monte Carlo simulations in high-energy physics experiments face the non-trivial task of simulating realistically the response of individual detector components, while keeping the costs in terms of CPU time reasonably low. Such simulation procedures are called digitization and have to incorporate detector physics in as much detail as possible, while performing fast enough. Here, we present our approach to the simulation of the Belle II vertex detector (VXD) using the ILC software framework. We simulate the response of DEPFET (DEPleted Field Effect Transistor) pixel detectors (PXD) and double-sided silicon micro-strip detectors (SVD) in the presence of a magnetic field. To achieve sufficient performance, we use a combination of fast numerical techniques and reasonable simplification of in-detector physics. The simulation itself is divided into 3 steps: particle propagation through matter (using Geant4 with a detailed implementation of the VXD geometry), charge collection in the silicon detectors (digitization) and clustering. The second and third steps are performed in separate reconstruction modules -Marlin modules: SiPxlDigi (pixel detectors) and SiStripDigi (micro-strip detectors). The following physics processes are considered: continuous energy loss fluctuations, generation of e-h pairs, drift in electric field, diffusion, Lorentz shift, mutual crosstalk (strips), read-out/geometric pitch effect (strips), electronics/digital noise. The clustering procedure is based on the center-of-gravity and analog head-tail algorithms. All effects have been studied and compared to test beam data in order to validate the algorithms and to determine the relative importance of individual processes.

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Section: Results and Models Validationmentioning

confidence: 99%

Silicon Simulation Code for Belle II and ILC

Drásal¹,

Prothmann²,

Schwenker³

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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“…The sensors tested were 450 µm thick ILC type prototypes with pixel sizes between 20 and 32 µm. For an overview of measurement and analysis with results focused on detailed inpixel variation of resolution, cluster size, and charge collection we refer to [9]. The estimated spatial resolutions of these detectors are around 1 µm and were determined with typical accuracy of 0.1 µm, as confirmed by simulation studies.…”

Section: Depfet Properties From Beam Testsmentioning

confidence: 90%

“…The DEPFET sensors designed for the ILC vertex detector were tested at CERN SPS using beams of pions and electrons with energies between 40 and 120 GeV [7], [8] and [9]. The sensors tested were 450 µm thick ILC type prototypes with pixel sizes between 20 and 32 µm.…”

Section: Depfet Properties From Beam Testsmentioning

confidence: 99%

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High resolution DEPFET active pixel sensors for the Belle II experiment

Kodyš

2011

2011 2nd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications

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The new Belle II experiment at the SuperKEKB collider at KEK was launched in 2009 as a general upgrade of the previous successful Belle experiment. Important improvements in the Belle II detector are additional two pixel layers forming the innermost part of the vertex detector. This paper gives a short overview of the expected impact of the two inner pixel layers on the performance of Belle II based on simulations and current experimental knowledge of the DEPFET pixel detectors. The focus is on the expected performance of the thinned DEPFET pixel sensors in Belle II in terms of spatial resolution. The measurements and simulations of the current generation of DEPFET sensors in beam tests indicate that the design resolution requirements can be met. The dependence of the spatial resolution on the deposited energy was observed in beam tests and we simulated the effect for the Belle II detector type to estimate its magnitude. A short description of the readout and data acquisition chain of the Belle II pixel vertex detector is given.

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“…Since the typical charge carrier spread is ∼7 µm in a 300 µm-thick fully depleted pixel and ∼15 µm in 15 µm of an undepleted CMOS sensor, there is limited interest in pushing the pitch much below 10-20 µm, except for imaging applications, where pixels of 5 µm are used in electron microscopy, or thinner depleted sensors. At these sizes, monolithic pixel sensors have obtained single point resolutions of 1-2 µm [34,35], corresponding to an asymptotic extrapolation resolution 5 µm. Track density is expected to become relevant in driving the pixel space granularity.…”

Section: Space -Time Granularitymentioning

confidence: 99%