R&amp;D paths of pixel detectors for vertex tracking and radiation imaging

Battaglia, M.; Viá, C. Da; Bortoletto, D.; Brenner, R.; Campbell, M.; Collins, P.; Betta, G.-F. Dalla; Demarteau, M.; Denes, P.; Graafsma, H.; Gregor, I. M.; Kluge, A.; Manzari, V.; Parkes, C.; Re, V.; Riedler, P.; Rizzo, G.; Snoeys, W.; Wermes, N.; Winter, M.

doi:10.1016/j.nima.2013.03.040

Cited by 14 publications

(7 citation statements)

References 152 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several groups have been trying to integrate on the same substrate both the radiation sensor and some element of the readout electronics, in order to reduce noise, interconnections, material [13]. In CMOS Monolithic Active Pixel Systems (MAPS) commercial CMOS processes are used, developing specially designed input stages that can cope with the very small charge deposited in the low resistivity CMOS substrate (of the order of 1000 e − ) [14].…”

Section: Pos(eps-hep 2013)147mentioning

confidence: 99%

Detector R&D

Forti¹

2014

Proceedings of the European Physical Society Conference on High Energy Physics — PoS(EPS-HEP 2013)

View full text Add to dashboard Cite

Detectors are they eyes with which we observe the physics and explore new phenomena. The development of more performing detectors is essential for future physics discoveries and requires appropriate attention, funding, and recognition. In this paper the current trends in High Energy Physics detector research and development are reviewed. Since the topic is broader than the available space, figures are not included in the paper, but can be found in the references, whose main sources are the recent instrumentation conferences [1 -6].

show abstract

Section: Pos(eps-hep 2013)147mentioning

confidence: 99%

Detector R&D

Forti¹

2014

Proceedings of the European Physical Society Conference on High Energy Physics — PoS(EPS-HEP 2013)

View full text Add to dashboard Cite

show abstract

“…[9]). The significant progress in the last decade in the development of Monolithic Active Pixel Sensors (MAPS), in which the active detector, analog signal shaping, and digital conversion take place in a single silicon chip (i.e.…”

Section: The Microvertex Tracking Systemmentioning

confidence: 99%

Monolithic active pixel silicon detectors for future electron ion colliders: Status and plans

Aschenauer

Cole

Crowley

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

View full text Add to dashboard Cite

More than thirty years after Quantum Cromody namics (QCD) was first proposed as the fundamental theory of the strong force, very little is still known about the dynamical basis of hadron structure. How do these fundamental degrees of freedom dynamically generate the mass, spin, motion and spatial distribution of color charges inside hadrons? To investigate these fundamental questions a new electron-protonlelectron-ion collider is proposed (EIC). The inner tracking system of the detectors in these colliders will require very high granularity, low material budget and, radiation hard design. In this talk, it will be shown that monolithic active pixel silicon detectors (MAPS) with sensors based on a CMOS technology satisfy all these requirements and test results will be provided. An overview will be given on eRHIC: a EIC facility designed to be realized in the Brookhaven National Laboratory, on the tests ongoing in Brookhaven National Laboratory and Columbia University on two MAPS prototype MIMOSA-26.

show abstract

“…Typically, they comprise the innermost elements of the detectors and are used for tracking and vertexing. Hybrid pixel and monolithic active pixel silicon (MAPS) detectors are currently prominent silicon technologies used by CMS, ATLAS, and ALICE [5,6,7].…”

Section: Introduction 1motivation and Requirements For Absolute Charg...mentioning

confidence: 99%

New Method for Silicon Sensor Charge Calibration Using Compton Scattering

McCormack¹,

Garcia-Sciveres²,

Heim³

et al. 2020

Preprint

View full text Add to dashboard Cite

In order to cope with increasing lifetime radiation damage expected at collider experiments, silicon sensors are becoming increasingly thin. To achieve adequate detection efficiency, the next generation of detectors may have to operate with thresholds below 1000 electron-hole pairs. The readout chips attached to these sensors should be calibrated to some known external charge, but there is a lack of traditional sources in this charge regime. We present a new method for absolute charge calibration based on Compton scattering. In the past, this method has been used for calibration of scintillators, but to our knowledge never for silicon detectors. Here it has been studied using a 150 micron thick planar silicon sensor on an RD53A readout integrated circuit.

show abstract

R&D paths of pixel detectors for vertex tracking and radiation imaging

Cited by 14 publications

References 152 publications

Detector R&D

Detector R&D

Monolithic active pixel silicon detectors for future electron ion colliders: Status and plans

New Method for Silicon Sensor Charge Calibration Using Compton Scattering

Contact Info

Product

Resources

About