Intrinsic limitations of GaAs device cooling for microwave low noise applications

Pantoja, José Miguel Miranda; Sebastián, J.L.; Muñoz, S.

doi:10.1109/mwsym.1998.700704

Cited by 1 publication

(1 citation statement)

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“…Too few intervals will not improve the efficiency whereas the use of an excessive number of intervals results in a too involved function for the calculation of the time of flight and also to a less effective optimization owing to the higher amount of variables to optimize. Different trials revealed that a total of five or six intervals is the best choice for the simulation of GaAs and InP in a wide range of doping concentrations (10 14 cm −3 -5 × 10 18 cm −3 ) and temperatures (77 K-300 K) [17,18]. The modification of the interval widths does not affect the calculation of the free flight time, which only depends on the total number of intervals [9].…”

Section: Description Of the Methodsmentioning

confidence: 99%

Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors

Miranda

Lin

Shaalan

et al. 1999

Semicond. Sci. Technol.

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This paper presents a procedure to improve the algorithm of Sangiorgi, Riccó and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self-scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.

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Section: Description Of the Methodsmentioning

confidence: 99%