2004
DOI: 10.1016/j.mseb.2003.10.074
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Intrinsic conductive oxide–p-InSe solar cells

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Cited by 31 publications
(17 citation statements)
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“…InSe plates of a 250-300 lm thickness were applied as a base substrate. Intrinsic oxide-p-InSe surfacebarrier diodes were produced by thermal oxidation of indium selenide substrates in air [13]. The applied technologies are simpler than those usually applied and use a practical diffusion technique making it possible to manufacture structures with shallow location of the p-n-junctions.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…InSe plates of a 250-300 lm thickness were applied as a base substrate. Intrinsic oxide-p-InSe surfacebarrier diodes were produced by thermal oxidation of indium selenide substrates in air [13]. The applied technologies are simpler than those usually applied and use a practical diffusion technique making it possible to manufacture structures with shallow location of the p-n-junctions.…”
Section: Methodsmentioning
confidence: 99%
“…7 and have the shape of a band limited on both sides as is typical for spectra of hetero-junctions. The photosensitivity long-wavelength edge at $1.2 eV is caused by the absorption of light in the base semiconductor while the short-wavelength edge (at the photon energy hm P 2.0 eV) is because of the absorption in the intrinsic oxide film [13]. A low photosensitivity at hm > 2.0 eV is explained by the small thickness of the oxide layer.…”
Section: Photoelectric Measurementsmentioning
confidence: 98%
“…With a band gap of 1.25 eV, InSe is a promising material for the solar cell technology [5][6][7][8][9]. There have been several papers reporting the optimization of parameters of InSe-based heterojunctions for solar cell application, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…There have been several papers reporting the optimization of parameters of InSe-based heterojunctions for solar cell application, e.g. ITO/p-InSe [9], intrinsic oxide/p-InSe [8] etc. The largest solar efficiency ever reported for an InSe-based solar cell (8% for unannealed samples and 10% for annealed samples) was attained by the authors of [9].…”
Section: Introductionmentioning
confidence: 99%
“…Among them, deposition on an optical contact [6][7][8], thermal oxidation [9,10], and quasi van der Waals epitaxy [11,12] stand out. In addition, heterostructures on the van der Waals surface of a layered crystal can be formed by annealing the crystal in the vapors of different ele ments under certain thermodynamic conditions.…”
Section: Introductionmentioning
confidence: 99%