2009
DOI: 10.3938/jkps.54.194
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Intrinsic Amorphous Silicon (a-Si:H) Thin Film Prepared by Using Remote Plasma Chemical Vapor Deposition Method and Used as a Passivation Layer for a Heterojunction Solar Cell

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Cited by 14 publications
(3 citation statements)
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“…Numerous deposition parameters control the quality of an i-a-Si:H layer. [4][5][6][7][8] The key considerations in setting the deposition parameters are the need to passivate the surface of a c-Si substrate; to prevent the initiation of the localized epitaxial growth at the a-Si:H/c-Si interface and to reduce the defects in a-Si:H films. 4,9,10 Hydrogen dilution of the silane gas mixture is extensively used in the deposition of a-Si:H films in thin film solar cells to improve performance and stability.…”
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confidence: 99%
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“…Numerous deposition parameters control the quality of an i-a-Si:H layer. [4][5][6][7][8] The key considerations in setting the deposition parameters are the need to passivate the surface of a c-Si substrate; to prevent the initiation of the localized epitaxial growth at the a-Si:H/c-Si interface and to reduce the defects in a-Si:H films. 4,9,10 Hydrogen dilution of the silane gas mixture is extensively used in the deposition of a-Si:H films in thin film solar cells to improve performance and stability.…”
mentioning
confidence: 99%
“…Kim et al pointed out that an R of 2-4 can effectively improve the efficiencies of p-type HJS solar cells compared to those without H 2 dilution. 6 More recently, Jeon et al and Dao et al used radio frequency PECVD and inductive coupled plasma CVD, respectively, to deposit a-Si:H films on c-Si substrates with various R. 7,8 The optimum R values to obtain the highest effective lifetime were very different (R ¼ 15 for Jeon et al and R ¼ 1 for Dao et al), perhaps because different deposition systems were used. Note that both groups studied the quality of the a-Si:H layer without the fabrication of HJS solar cells.…”
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confidence: 99%
“…Amorphous Si thin films, which are typically fabricated by plasma-enhanced chemical vapor deposition (PECVD), are usually applied in advanced electronics devices such as highvoltage thin film transistors, [2,3] microelectromechanical systems (MEMS), [4] solar cell devices, [5,6] and passivation buffer layers. [7][8][9][10][11] On the contrary, investigations on a-Si nanocolumns, nanopillars, or nanoholes are undergoing. Kim et al [12] reported amorphous silicon on copper nanopillars electrodes; similarly, Lin et al [13] reported lithium fluoride-coated amorphous silicon nanocolumns for lithium-ion batteries.…”
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confidence: 99%