Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

Kollmer, H.; Im, Jin Seo; Heppel, S.; Off, J.; Scholz, F.; Hangleiter, A.

doi:10.1063/1.122958

Cited by 69 publications

(42 citation statements)

References 10 publications

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“…Also, the polarization induced fields can cause a significant reduction of the effective band gap due to quantum-confined Stark [7] and Franz Keldysch effect [8] causing a red-shift in optical absorption and emission spectra [9]. Photoluminescence measurements of AlGaN/GaN and InGaN/GaN quantum wells [10,11] demonstrate the presence of polarization induced built-in electric fields with a strength of up to %2 MV/cm and the strong influence of those strong fields on the carrier recombination process [12].…”

Section: Introductionmentioning

confidence: 96%

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Ambacher¹,

Dimitrov

Stutzmann

et al. 1999

phys. stat. sol. (b)

128

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Section: Introductionmentioning

confidence: 96%

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Ambacher¹,

Dimitrov

Stutzmann

et al. 1999

phys. stat. sol. (b)

128

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“…In the present structures suitable for short wavelength laser diodes the level spacing in the well replicates the multi interface bandoffset across the GaN/GaInN/GaN structure leading to an evenly spaced ladder with a step size given by the polarization dipole across the well. The large thickness of the barriers rules out involvement of inter-well coupling [10] in our structures. This property marks an important distinction of the present piezoelectric Stark-like ladder from Wannier-Stark ladders found in superlattices of other compound systems.…”

Section: Resultsmentioning

confidence: 94%

Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells

Wetzel¹,

Kasumi

Detchprohm

et al. 1999

phys. stat. sol. (b)

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The optical properties and their relation to the electronic bandstructure in Si-doped GaInN/GaN multiple quantum well structures typical for near UV laser diode devices are investigated in photoluminescence, photoluminescence excitation and photoreflection spectroscopies. A set of four evenly spaced levels N 0 Á Á Á N 3 is identified covering the spectral range from the lowest luminescence band (N 3 ) to the GaN barrier energy (N 0 ). The splitting of N 3 and N 2 appears as a discrete splitting rather than a continuous localization process. The level splitting is well described by a Stark-like ladder defined by the multi interface bandoffset DE FeL z across the piezoelectric GaN/GaInN/GaN structure.

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“…While remarkable progress has been achieved in the development of InGaN-based optoelectronic devices [17][18][19][20][21] the fundamental emission mechanism of InGaN, i.e. localization in local potential minima [22][23][24][25] versus piezoelectric fields [26], still remains a point of controversial discussion. In our measurements we directly evidence the alloy fluctuations in thick InGaN layers (i.e.…”

Section: Introductionmentioning

confidence: 99%

Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties

Christen

Riemann

Bertram

et al. 2003

phys. stat. sol. (c)

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For a detailed understanding of complex semiconductor heterostructures and the physics of devices based on them, a systematic determination and correlation of the structural, chemical, electronic, and optical properties on a micro-or nano-scale is essential. Luminescence techniques belong to the most sensitive, non-destructive methods of semiconductor research. The combination of luminescence spectroscopy with the high spatial resolution of a scanning electron microscope, as realized by the technique of cathodoluminescence microscopy, provides a powerful tool for the optical nano-characterization of semiconductors, their heterostructures as well as their interfaces. Additional access to the local electronic and structural properties is provided by micro-Raman spectroscopy, e.g. giving insight into the local free carrier concentration and local stress. In this paper, the properties of group-III-nitrides are investigated by highly spatially and spectrally resolved cathodoluminescence microscopy in conjunction with micro-Raman spectroscopy. Complex phenomena of self-organization and their strong impact on the microscopic and nanoscopic properties of both binary and ternary nitrides are presented. As the ultimate measure of device performance, the microscopic properties of light emitting diodes are assessed under operation. Using microelectroluminescence mapping in the optical microscope as well as in the near field detection mode of a scanning near field optical microscope, the microscopic origin of the macroscopic spectral red shift in light emitting diodes is identified.

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Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

Cited by 69 publications

References 10 publications

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

Discrete Stark-Like Ladder in Piezoelectric GaInN/GaN Quantum Wells

Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties

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