InTlSb quantum dot structures

Efficient two-dimensional Fraunhofer diffraction pattern via electron spin coherence

“…Presently, cuttingedge research in the EIG field is focused on implementing gratings within optical parity-time symmetric cold atomic media, thereby producing an asymmetric diffraction pattern [23,[31][32][33]. In recent times, semiconductor nanostructure devices, including quantum dots and quantum wells, have been considered as noteworthy candidates for controlling and manipulating optical properties, despite atomic systems being satisfactory alternatives [34][35][36][37][38][39][40][41][42]. These devices hold great promise in the world of micro-and nanotechnologies.…”

InGaAsSb/GaAsSb quantum dot structures

“…In [17, 18], we examine $$InS{b_{.98}}B{i_{.02}}$$, $$InS{b_{.96}}B{i_{.04}}$$, and $$InS{b_{.94}}B{i_{.06}}$$ QD structures peaked at 3800, 4500, and 7000 nm wavelengths, respectively. In [19, 20], our group studies $$InTlSb$$ QD structure where a high gain is obtained at $$2000 - 8000\ {\rm nm}$$ wavelength. Accordingly, all these works cover ternary Sb‐based QD structures.…”

Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier

“…Te work in our laboratory on thallium-based quantum dot (QD) structures began after investigating the well-known III-V semiconductor structures. First, it starts with InTlSb QD structures [13], InTlAsSb QDs [14], then TlGaN QDs [15], and fnally, InTlSb, InTlP, InTlAs, and InTlN QDs are studied [16]. As the III-VII semiconductors are poorly studied, this work studied the thallium halogenide TlBr QD structure, which is not poorly studied.…”