Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures

Mori, Suguru; Ando, Tsuneya

doi:10.1103/physrevb.19.6433

Cited by 159 publications

(48 citation statements)

References 24 publications

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“…This suggests that ∆n s contributed from the interfacial Si increases the 2DEG sheet concentration to the level where higher subbands may be populated. And then, as predicted by the intersubband scattering model [11,13], the RT Hall mobility rapidly declines. This behaviour, which is correlated to the proximity of the 2DEG channel to the bulk GaN/epitaxial interface is in agreement with Mori's prediction [11] of the scattering of electrons between subbands that should occur when more than one electron subband is occupied.…”

Section: CMmentioning

confidence: 96%

Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures

Grenko¹,

Ebert²,

Reynolds³

et al. 2009

Phys. Status Solidi (c)

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We report on the growth of Al0.25Ga0.75N/GaN heterostructures on low dislocation density semi‐insulating c‐axis GaN substrates. Room temperature Hall mobilities up to 1805 cm2/Vs at sheet carrier densities of 0.77x1013 cm–2 have been measured. By varying the GaN buffer layer thickness in these homoepitaxially‐grown Al0.25Ga0.75N/GaN heterostructures, we observed a buffer‐induced modulation of the room temperature 2DEG sheet carrier densities and Hall mobilities. The increase in sheet carrier density and corresponding decrease in mobility as the GaN buffer layer thickness is reduced below 0.75 μm is related to the presence of Si impurities at the bulk GaN substrate/epitaxial interface. Capacitance‐voltage measurements and SIMS analysis confirm the presence of Si impurities at the surface prior to and after epitaxial growth. The factor of 2 reduction in the room temperature mobility is consistent with a predicted theoretical mobility reduction based on intersubband scattering. We have also been able to separate the contributions to the 2DEG carrier density from the ionized donors and the polarization field; the magnitude of each is ∼5x1012 cm–2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: CMmentioning

confidence: 96%

Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures

Grenko¹,

Ebert²,

Reynolds³

et al. 2009

Phys. Status Solidi (c)

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“…In the second variational step, we obtain the k and spin dependent eigenfunctions Ψ hk (z) of the total HamiltonianH = H L + V (z) for the HH1 sub-band by expanding Ψ hk (z) in terms of the lowest eigenstates ofH for k = 0, whenH becomes diagonal. For the k = 0 HH1 and LH1 states we use the zero-node wave functions (11) with v = h, l. For the one-node HH2, LH2 states we use the form 48,62 …”

Section: A Luttinger Hamiltonian For 2dhgsmentioning

confidence: 99%

Spin-orbit interactions in inversion-asymmetric two-dimensional hole systems: A variational analysis

Marcellina¹,

Hamilton²,

Winkler³

et al. 2017

Phys. Rev. B

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We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We develop a semi-analytical variational method to quantify SO interactions, accounting for both structure inversion asymmetry (SIA) and bulk inversion asymmetry (BIA). Under certain circumstances, using the Schrieffer-Wolff (SW) transformation, the dispersion of the ground state heavy hole subbands can be written aswhere A, B, and C are material-and structure-dependent coefficients. We provide a simple method of calculating the parameters A, B, and C, yet demonstrate that the simple SW approximation leading to a SIA (Rashba) spin splitting ∝ k 3 frequently breaks down. We determine the parameter regimes at which this happens for the materials above and discuss a convenient semi-analytical method to obtain the correct spin splitting, effective masses, Fermi level, and subband occupancy, together with their dependence on the charge density, and dopant type, for both inversion and accumulation layers. Our results are in good agreement with fully numerical calculations as well as with experimental findings. They suggest that a naive application of the simple cubic Rashba model is of limited use in either common heterostructures or quantum dots. Finally, we find that for the single heterojunctions studied here the magnitudes of BIA terms are always much smaller than those of SIA terms.

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“…A single modulation doped heterostructure is usually approximated by a simple triangular quantum well and trial wave functions are used. 26 However, this approach may result in a large error in the calculated 2D scattering rates. In order to investigate the error introduced by this approach, we compared the 2D polar optical phonon scattering rates obtained using trial wave functions with those calculated by the exact wave functions.…”

Section: D Polar Optical Phonon Scattering Ratesmentioning

confidence: 99%

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

Besikci

Bakir

Tanatar

2000

Journal of Applied Physics

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0.51 In 0.49 P/In x Ga 1Ϫx As/GaAs (xϭ0, 0.15, and 0.25͒ modulation doped heterostructures and high electron mobility transistors are investigated through the ensemble Monte Carlo technique. The two dimensional polar optical phonon scattering rates including and excluding dielectric screening effects are calculated using the self-consistently evaluated electronic states in the quantum well. The calculated scattering rates are compared in order to see the effects of screening on the inter-and intra-subband scattering. Screening significantly lowers the intra-subband polar optical phonon scattering rates in both lattice matched and pseudomorphic structures. This results in a considerable lowering of the critical electric field beyond which negative differential resistance is seen. Screening also modifies the dependence of transport properties on the quantum well parameters. The results of the ensemble Monte Carlo simulations of high electron mobility transistors show that the performance of the device is considerably underestimated, if screening is not included in the calculation of the polar optical phonon scattering rates.

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Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures

Cited by 159 publications

References 24 publications

Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures

Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures

Spin-orbit interactions in inversion-asymmetric two-dimensional hole systems: A variational analysis

Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1−xAs/GaAs quantum wells

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