Intersubband Quantum‐Box Lasers: Progress and Potential as Uncooled Mid‐Infrared Sources

Luryi, Serge; Xu, Junzhong; Zaslavsky, Alexander

doi:10.1002/9780470649343.ch4

Cited by 2 publications

(3 citation statements)

References 29 publications

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“…Thus, DW-QCL development is being pursued not only to improve the device performance and reliability, but also as a means for fulfilling the promise of IQB devices for achieving cw wallplug efficiencies as high as 50% at room temperature. 21…”

Section: The Deep-well Conceptmentioning

confidence: 99%

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

et al. 2010

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The equations for threshold-current density J th and external differential quantum efficiency η d of quantum cascade lasers (QCLs) are modified to include electron leakage and the electron-backfilling term corrected to take into account hot electrons in the injector. We show that by introducing both deep quantum wells and tall barriers in the active regions of 4.8-μm-emitting QCLs, and by tapering the conduction-band edge of both injector and extractor regions, one can significantly reduce electron leakage. The characteristic temperatures for J th and η d , denoted by T 0 and T 1 , respectively, are found to reach values as high as 278 and 285 K over the 20 to 90 • C temperature range, which means that J th and η d display ≈ 2.3 slower variation than conventional 4.5-to 5.0-μm-emitting, high-performance QCLs over the same temperature range. A model for the thermal excitation of hot injected electrons from the upper laser level to the upper active-region energy states, wherefrom some relax to the lower active-region states and some are scattered to the upper miniband, is used to estimate the leakage current. Estimated T 0 values are in good agreement with experiment for both conventional QCLs and deep-well QCLs. The T 1 values are justified by increases in both electron leakage and waveguide loss with temperature.

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Section: The Deep-well Conceptmentioning

confidence: 99%

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

et al. 2010

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“…These structures are composed of nanosize active ''boxes'' which are typically part of multilayer, plasma-etched pillars of 20 nm to 40 nm diameter, surrounded by a current-blocking material (CBM). 10,11 As in most nanostructured devices, these structures are sensitive to the local density of surface states and could be laterally depleted of carriers due to interfacial states between the nanopillars and the CBM.…”

Section: Introductionmentioning

confidence: 99%

“…The {110} surfaces were prepared using reactive-ion etching (RIE), which can lead to both near-surface damage and unintentional surface contamination. 10,12 Materials were then regrown after a combination of ex situ and in situ processing. The interfaces between substrates and regrown materials were characterized by capacitance-voltage (CV) measurement and electrochemical capacitancevoltage (ECV) profiling.…”

Section: Introductionmentioning

confidence: 99%

Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures

Rathi

Tsvid

Khandekar

et al. 2009

Journal of Elec Materi

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The interfacial charge density of regrown structures was studied for several different material systems: GaAs, InGaAs/InP, and InAlAs-InGaAs superlattice structures on InP. The particular application of interest is in the fabrication of nanoscale devices. Such structures require a very low density of interfacial charge at their exposed surfaces in order to avoid Fermi-level pinning and subsequent lateral carrier depletion across the structure. (110)-Oriented samples, mimicking the exposed sidewalls of nano-etched structures, were plasma-etched using a variety of gas-phase chemistries. The interfacial charge density at regrown interfaces was studied using capacitance-voltage (CV) and electrochemical CV techniques after in situ and ex situ pretreatments and epitaxial regrowth. The minimum interfacial charge densities obtained for these material systems were <10 11 cm À2 . Preferential regrowth around etched nanopillars was demonstrated for InP-based structures.

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Intersubband Quantum‐Box Lasers: Progress and Potential as Uncooled Mid‐Infrared Sources

Cited by 2 publications

References 29 publications

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

Electron leakage and its suppression via deep-well structures in 4.5- to 5.0-μm-emitting quantum cascade lasers

Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures

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